EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEV

专利名称：EFFICIENT CARRIER INJECTION IN A

SEMICONDUCTOR DEVICE

发明人：Ralph H. Johnson申请号：US12941940申请日：20101108

公开号：US20110049471A1公开日：20110303

专利附图：

摘要：Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufacturedto have a wide bandgap material near a narrow bandgap material. Electron injection isimproved by an intermediate structure positioned between the wide bandgap material

and the narrow bandgap material. The intermediate structure is an inflection, such as aplateau, in the ramping of the composition between the wide bandgap material and thenarrow bandgap material. The intermediate structure is highly doped and has acomposition with a desired low electron affinity. The injection structure can be used onthe p-side of a device with a p-doped intermediate structure at high hole affinity.

申请人：Ralph H. Johnson

地址：Allen TX US

国籍：US

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