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专利名称：Non-volatile memory devices and systems
including phase-change one-time-programmable (OTP) memory cells andrelated methods
发明人：Kwang-Jin Lee,Woo-Yeong Cho,Du-Eung
Kim,Beak-Hyung Cho
申请号：US11488010申请日：20060718
公开号：US20070133269A1公开日：20070614
专利附图：
摘要：In one aspect, a non-volatile memory includes a phase-change memory cellarray which includes a plurality of normal phase-change memory cells and a plurality ofpseudo one-time-programmable (OTP) phase-change memory cells, a write driver whichwrites data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array, and an OTP controller which selectively disables the writedriver.
申请人：Kwang-Jin Lee,Woo-Yeong Cho,Du-Eung Kim,Beak-Hyung Cho
地址：Hwasung-si KR,Suwon-si KR,Yongin-si KR,Hwasung-si KR
国籍：KR,KR,KR,KR
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