Power semiconductor device and method for producin

专利名称：Power semiconductor device and method

for producing it

发明人：Ralf Otremba申请号：US11677210申请日：20070221公开号：US07679197B2公开日：20100316

专利附图：

摘要：A power semiconductor device () has a leadframe (), at least one vertical powersemiconductor component () and at least one further electronic device () which isarranged on the power semiconductor component (). The chip carrier () of the leadframe

() has at least two separate parts () on which the power semiconductor component () isarranged. The power semiconductor component () is embodied such that the lowersurface () of the first part () of the chip carrier () provides a ground contact area () of thepower semiconductor component ().

申请人：Ralf Otremba

地址：Kaufbeuren DE

国籍：DE

代理机构：Banner & Witcoff, Ltd.

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