SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND METHO

专利名称：SEMICONDUCTOR DEVICE, DISPLAY

APPARATUS, AND METHOD OFMANUFACTURING SEMICONDUCTORDEVICE

发明人：KUNIAKI OKADA,SEIICHI UCHIDA,NAOKI

UEDA,SUMIO KATOH

申请号：US15534197申请日：20151214

公开号：US20180259820A1公开日：20180913

专利附图：

摘要：A semiconductor device (A) includes a thin film transistor (), an inter-layerinsulation layer () covering the thin film transistor, and a transparent conductive layer ()formed on the inter-layer insulation layer. The metal oxide layer () of the thin filmtransistor includes a first portion () overlapping the gate electrode () via a gate insulationlayer () and a second portion () not overlapping the gate electrode (). The second portion() crosses a different edge (e) different from an edge (e) of the drain electrode () on aside of the first portion when viewed in the normal direction of the substrate (). The inter-layer insulation layer has a contact hole () disposed to overlap a part of the drainelectrode () and at least a part of the second portion () of the metal oxide layer whenviewed in the normal direction of the substrate. The transparent conductive layer ()comes into contact with the drain electrode (), the second portion (), and the gateinsulation layer () in the contact hole ().

申请人：Sharp Kabushiki Kaisha

地址：Sakai City, Osaka JP

国籍：JP

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