NOTICEOFCHANGENOTMEASUREMENTSENSITIVE1eTHISHANDBOOKISFORGUIDANCEONLY-MIL-HDBK-217FDONOTCITETHISDOCUMENTASAREQUIREMENTNOTICE228February1995MILITARYHANDBOOKRELIABILITYPREDICTIONOFELECTRONICEQUIPMENTToallholdersofMIL-HDBK-217F1.ThefollowingpagesofMIL-HDBK-217FhavebeenrevisedandsupersedethepageaMed..rNewPage($)1“DatesupersededPage(6)DateFrontCover...FrontCover2December1991rMl[2December199I...11!Reprintedwithoutcharmeiviv2Deoember1991vvI2December1991\\viviI2Deoember1991vii.,.1viiI10Julv1992VlllNewPageL1-11-12Deoember199111-2NewPage~2-12“112December19912-22-22Deoember1991I2-32-3.2Deoember1991112-412-4I2Daoember19911,2-52-512December19912-62-612Deoember19919.7NewPaaeIr2-8INewPage5“35-310Ju~1992I5410July19925-4Reprintedwithoutchange5-55-52December19915-65-62IxoWnber1991Ir5-95-910Ju&19924v5-1o2December19915-1oReprintedwithoutchange,5-235-232Deoember19915-245-242Deoember19916-12December19916-1~Reprintedwithoutchange6-26-2~2December19917-37-32Deoember19917-42December19917-4Reprintedwithoutchange9-1through9-39-1through9-292December199110-1through10-610-1through10-322December1991,11-111-1[2C)ecember199111-211-2I2December199111-!?..-11-3!2December199111-411-4,11-52December19911-12-112-12,December19911~.p12-2December1991d.——.—.1MI1-HDBK-217FNOTICE2*INewPage(s)DateSupersededPage(s)Dater12-312-310JUIY199212-412-4I2December199112-512-52December199113-113-12December19911f13-2---113-2---2December1991‘-?ecember199114-1through14-214-1mrougn144zUecember199114-314-52December199115-1through15-315-1through15-62December1991r16-116-12December1991#16-2INewPage—i16-4INewPage17-117-12December1991AppendixAA-1throughA-182December1991,10July1992C-3c-32December19911c-411c-4]2December1991I2.RetainthepagesofthisnoticeandinsertbeforetheTableofContents.3.HoldersofMIL-HDBK-217Fwillverifythatpagechangesandadditionsindicatedhavebeenentered.Thenoticepageswillberetainedasachecksheet.Theissuance,togetherwithappendedpages,isaseparatepublication.Eachnoticeistoberetainedbystockingpointsuntilthemilitaryhandbookisrevisedorcanceled.Custodians:PreparingActivity:Army-CRAirForce-17Navy-ECAirForce-17ProjectNo,RELI-0074ReviewActivities:Army-Ml,AV,ERNavy-SH,AS,OSAirForce-11,13,15,19,99Army-AT,ME,GLNavy-CG,MC,YD,TDAirForce-85AMSCNIADISTRIBUTIONSTATEMENTA:Approvedforpubllcrelease;dlstnbutlonunlimited.———----=,I-r____—INOTMEASUREMENTSENSITIVE]MIL-HDBK-217F2DECEMBER1991SUPERSEDINGMIL-HDBK-217E,Notice12January1990MILITARYHANDBOOKRELIABILITYPREDICTIONOFELECTRONICEQUIPMENTTHISHANDBOOKISFORGUIDANCEONLY-DONOTCITETHISDOCUMENTASAREQUIREMENTAMSCNIADISTRIBUTIONSTATEMENTAdApprovedforpubllcrelease;drstrlbu!lcntinllmtted!FSC-RELI_—-.:MIL-HDBK-217FDEPARTMENTOFDEFENSEWASHINGTONDC20301RELIABILITYPREDICTIONOFELECTRONICEQUIPMENT1,ThisstandardizationhandbookwasdevelopedbytheDepartmentofDefensewiththeassistanceofthemilitarydepartments,federalagencies,andindustry.2.Everyefforthasbeenmadetoreflectthelatestinformationonreliabilitypredictionprocedures.Itistheintenttoreviewthishandbookperiodicallytoensureitscompletenessandcurrency.3.Beneficialcomments(recommendations,additions,deletions)andanypertinentdatawhichmaybeofuseinimprovingthisdocumentshouldbeaddressedto:RomeLaborato@ERSR,AttmSeymourF.Morris,525BrooksRd.,GriffissAFB,NY13441-4505,byusingtheself-addressedStandardizationDocumentImprovementProposal(DDForm1426)appearingattheendofthisdocumentorbyletter.II,...-..-—..-...,-—.-—-_____...--.—..—-----al..-A--I-*A—MIL-HDBK-217FTA8LESECTION1.1OFCONTENTS1.21.3SECTIONSECTION3.13.23.33.4SECTIONSECTION1:SCOPEPurpose.................................................................................................................Application.............................................................................................................ComputerizedReliabilityPrediction.........................................................................2:REFERENCEDOCUMENTS.......................................................................1-11-11-12-13:INTRODUCTIONReliabilityEngineering............................................................................................TheRoleofReliabilityPrediction..............................................................................LimitationsofReliabilityPredictions..........................................................................PartStressAnalysisPrediction................................................................................4:5:RELIABILITYANALYSISEVALUATION3-13-13-23-2...................................................4-15-15-35-45-75-85-95-1o5-115“135-145-155-175-185-205.15.25.35.45.55.65.75.85.95.105.115.125.13SECTION6.06.16.26.36.46.56.66.76.86.96.106.116.126.136,146.15..........................................................MICROCIRCUITS,INTRODUCTIONGate/LogicArraysandMicroprocessors....................................................................Memories..........................................0....................................................................VHSIC/VHSICLike..................................................................................................GaAsMMICandDigitalDevices................................................................................Hybrids..................................................................................................................SAWDevices.........................................................................................................MagneticBubbleMemories.....................................................................................XTTableforAll........................................................................0..................,*.**.......,C2TableforAll.......................................................................................................XE,~andZQTablesforAll.............................................................*.**................0.TJDetermination,TJDetermination,(AllExceptHybrids)......................*.*..................................*.....*,.(ForHybrids).......................................................................*.......Examples...............................................................................................................DISCRETESEMICONDUCTORSDiscreteSemiconductors,Introduction........................................................00..........Diodes,LowFrequency.........................................................................................,Diodes,HighFrequency(Microwave,RF).................................................................Transistors,LowFrequency,Bipolar........................................................................Transistors,LowFrequency,SiFET........................................0................................Transistors,Unijunction...........................................................................................Transistors,LowNoise,HighFrequency,Bipolar..............O.*......**.*..........................Transistors,HighPower,HighFrequency,Bipolar.......0.............................................Transistors,HighFrequmcy,GaAsFET............6:..........0.........................................................Transistors,HighFrequency,SiFET..........................ThyristorsandSCRS.....................**................................................................0............................................*......,,.,.0......,,,Optoelectronics,Optoelectronics,TJDeterminationDetectors,Isolators,Emitters............................Optoelectronics,AlphanumericDisplays.........0.......................................................LaserDiode......................................................................................................................................................................................6-16-26-46-66-86-96-106-126-146-166-176-196-206-216-236-25Example.................................................................................................................Ill...mmT1MIL-HD8K-217FNOTICE2TABLEOFCONTENTSsECTION7:TUBEs7-17.1AllTypesExcept?WTandMagnetron....................................................................7-37.2TravelingWave.......................................................................................................7-47.3Magnetron.......................................................................!.....................................SECTlON8:LASERs8-18.0introduction...........................................................................................................8-28.1HeliumandArgon............................................................................”........”.......””...8-38.2CarbonDioxide,Sealed.........................................................................................8-48.3CarbonDioxide,Flowing.......................................................................................8-58.4SolidState,ND:YAGandRubyRod......................................................................sECTION9:RESISToRs9-19.1Resistors..................................................................................”.........o=~......-..”..”“”sECTION10:CAPACITORS10-110.1Capacitors................................................................................*..........0...”...........”.10-610.2Capacitors,Example............................................................................”.................sECTIO~11:INDUCTIVEDEVICES11-111.1Transformers.........................................................................................................11-311.2Colh,..............................................................................................................””....11-411.3Determinationofl-lotSpotTemperature..........................................................”.....sECTlol12:ROTATINGDEVICES12-112.1Motors.................................................................................*.*........”...................”.12-412.2SynchrosandResolvem.......................................................”......*....”.”.........””.””.*.*12-512.3ElapsedlimeMeters...........................................................................$.................sECTIO13:RELAys13-113.1Mechanical..........................................................................................0..................13-313.2SolidStateandTimeDelay.....................................................................................sECTlc)N14:SWITCHEs14-114.1Sw[tche..................................................................................*.”......o.”..~”...............14-214.2CircuitBreakers......................................0..,,..,.............”...........”.........”””.........””......SECTI()N15:CONNECTORS15-115.1Connectors,General.......................................................................”...........”..........15-315.2)Connectors,Sockets............................................................*....”...*...**”*..*..*.*.*......sECTl~ON16:INTERCONNECTIONASSEMBLIES..........................................16-116.’IInterconnectionAssemblieswithPlatedThroughHoles.........................................16-216.:~InterconnectionAssemblies,SuflaceMountTechnologySECTION17:CONNECTIONS17-117.1Connections.................................................................................0........................SECT!ION18:METERS18-118.1Meters,Panel.................................!........................................................................SECTION19:QUARTZCRYSTALS19-119.1QuartzC~sta\\s......................................................................................................SupersedespagewofRevtslonFIv----——-—---nl-l--l,--,..*.--1.-----MIL-HDBK-217FNOTICE2TABLEOFCONTENTSSECTION20.1SECTION21.1SECTION22.1SECTION23.1APPENDIXAPPENDIXAPPENDIXLAMPS20:Lamps...................................................................................................................ELECTRONICFILTERS21:ElectronicFilters,Non-Tunable................................................................................FUSES22:Fuses...................................................................................................................MISCELLANEOUSPARTS23:MiscellaneousParts................................................................................................A:B:C:PARTSCOUNTRELIABILITYANDVLSIPREDICTIONCMOS.....................*..........*.........MODEL)..............20-121-122-123-1A-1B-1c-1VHSIC/VHSICOLIKEBIBLIOGRAPHY(DETAILED.........................................................................................LISTTableTableTableTableTable3-1:3-2:4-1:6-1:6-2:OFTABLES3-3PartswithMu)ti-LevelQualitySpecifications........................................................EnvironmentalSymbolandDescription........................................*.....................ReliabilityAnalysisChecklist.............................................................................DefauttCaseTemperaturesforAllEnvironments(°C)..........................................3-44-16-236-24ApproximateThermalResistanceforSemicond@orDevicesSk=.......*.*.......**......*...................*...*..*...........................inVariousPa*@LISTFigure5-1:Figure8-1:OFFIGURES5-188-1CrossSectionalViewofaHybridwithaSingleMulti-LayeredSubstrate................ExamplesofActiveOpticalSuffaces..................................................................VSupersedes,...-Ir—acincluclpagevofRevisionIVLRYIrlmllllulkFIIWUIIIICIIIICLILIM!L-HDBK-217FNOTICE2FOREWORD1.0THISHANDBOOKNOTBECITEDASAHAVETOCOMPLY.ISFORGUIDANCEIFREQUIREMENT.ONLY.ITIS,THETHISHANDBOOKSHALLCONTRACTORDOESNOTMIL-HDBK-217F,Notice2providesthestudy(seeRef.37listedinAppendixC):bqfollowingchangesbaseduponarecentlycompletedchipdevices.Revisedresistorandcapacitormodels,includingnewmodelstoaddressUpdatedfailureratemodelsfortransformers,connectors,printedcircuitboards(withconnections.Anewmodeltoaddresssurfacemountedcoils,motors,relays,andwithoutsurfaceswitches,circuitbreakers,mounttechnology)and..technologysolderconnections.ArevisedTravelingWaveTubemodelbasedupondatasuppliedbytheElectronicIndustriesAssociationMicrowaveTubeDivision.Thisfurtherlowersthecalculatedfailureratesbeyondtheearliermodificationsmadeinthebasedocument(MIL-HDBK-217F,2December1991).RevisedtheFastRecove~reevaluationofRef.28.PowerRectifierbasefailureratedownwardbasedonaqNotice2.0MIL-HDBK-217F,errorsinthebasicFRevision.3.0MIL-tiDBK-217F,(base1,(10July1992)wasissuedtocorrectminortypographicaldocument),(2December1991)providedthechangesbaseduponrecentlycompletedstudies(seeRef.30and32listedinAppendixC):1.Newfailureratepredictionmodelsareprovidedforthefollowingmicrocircuits:qfollowingclassesofninemajorMonolithicMonolithicMonolithic(includingMonolithicMonolithicMonolithicHybridBipolarDigitalandLinearGate/LogicGate/LogicArrayDevicesArrayDevicesqMOSDigitalandLinearBipolarandMOSDigitalqMicroprocessorDevicesControllers)BipolarandMOSMemoryDevicesGaAsDigitalDevicesGaAsMMICDevicesqqqqMicrocircuitsBubbleAcoustic9MagneticSurfaceMemoriesWaveDevicesqnewpredictionmodelsforbipolarandMOSThe2December1991revisionprovidedupto60,000,linearmicrocircuitswithupto3000microcircuitswithgatecountsandco-processorsupto32bits,transistors,bipolarandMOSdigitalmicroprocessormemorydeviceswithupto1millionbits,GaAsmonolithicmicrowaveintegratedcircuits(MMICS)withupto1,000activeelements,andGaAsdigitalICSwithupto10,000TheC,factorshavebeenextensivelyrevisedtoreflectnewtechnologytransistors.dewceswithImprovedreliability,andtheactivationenergiesrepresentingthetemperaturesensltwltyofthedice(nT)havebeenchangedforMOSdevicesand‘ormemoriesTheSupersedeswlBaiaKaUfiIIM1iw~av~pageVIIofRevisionF,NotIce1Vll~aIVuswMIL-HDBK-217FNOTICE2FOREWORDC2factorremainsunchangedfromtheprewousHandbookversion,butincludespingridarraysandsurfacemountpackagesusingthesamemodelashermetic,solder-sealeddualin-hnepackages.Newvalueshavebeenincludedforthequalityfactor(XQ),thelearningfactor(~~),andtheenvironmental!factor(nE).Themodelforhybridmicrocircuitshasbeenrevisedtobesimplertouse,todeletethetemperaturedependenceofthesealandinterconnectfailureratecontributions,andtoprovideamethodofcalculatingchipjunctiontemperatures.2.AnewmodelforVeryHighSpeedIntegratedCircuits(VHSIC/VHSiCLike)andVeryLargeScaleIntegration(VLSI)devices(gatecountsabove60,000).3.Thereformattingoftheentirehandbooktomakeiteasiertouse.4.Areductioninthenumberofenvironmentalfactors(zE)from27to14.5.ArevisedfailureratemodelforNetworkResistors.6.RewsedmodelsforTWSandKlystronsbasedondatasuppliedbytheElectronicIndustriesAssociationMicrowaveTubeDivision.MIL-HDBK-217FNOTICE21.0SCOPE-ThishandbookIsforguidanceonlyandshallnotbecitedasaPurpose1.1requirement.ffitla,thecontractordoesnothavetocomply(seePage1-2).Thepurposeofthishandbookistoestablishandmaintainconsistentanduniformmethodsforestimatingtheinherentreliability(i.e.,thereliabilityofamaturedesign)ofmilitaryelectronicequipmentandsystems.ItprovidesacommonbasisforreliabilitypredictionsduringacquisitionprogramsformilitaryItalsoestablishesacommonbasisforcomparingandevaluatingelectronicsystemsandequipment.Thehandbookisintendedtobeusedasatoolreliabilitypredictionsofrelatedorcompetitivedesigns.toincreasethereliabilityoftheequipmentbeingdesigned.1.2Appllcatlon-Thishandbookcontainstwomethodsofreliabilityprediction-“PartStressAnalysis”inSections5through23and‘PartsCount”inAppendixA.Thesemethodsvaryindegreeofinformationneededtoapplythem.TheParlStressAnalysisMethodrequiresagreateramountofdetailedinformationandisappl”=bleduringthelaterdesignphasewhenactualhardwareandcircuitsarebeingdesigned.ThePartsCountMethodrequireslessinformation,generallypartquantities,qualltylevel,andtheapplicationenvironment.ThismethodisapplicableduringtheearlydesignphaseIngeneral,thePartsCountMethodwillusuallyresultinamoreandduringproposalformulation.consewativeestimate(i.e.,higherfailurerate)ofsystemreliabilitythanthePartsStressMethod.Supersedespage1-1ofRevisionF1-1MIL-I-IDBK-217FNOTICE21.0SCOPECOMMANDER,R-LABORA~RY(AFMC),AlTN:RL/ERsR,lat.s.mm=ofSUBJECT:“-li~ili~Notice2to~-xDBK-217F,Elecwodclz@gX=t”,EOjactREU-0074tos~printingthesubjectaoticoRedictimPriorforbemade:qPointardtistrtitia,thetofollasthaDoDadditionsSix@OStocknwtACrOSSthecover“EZISqHAZUX)BOOKXSFOR~inBIGBOLDBLACKLZITERS-AuCAM:bert-Y.mm’rm~s1.0:MmEsNOT“MSmcunENT~A~””xntheFOREWORD(PageviiofNotice2),~agr~h‘THISHANDBOOK1SPORGUIDAN=ONLY.msEANDBoox~~~RIFrrxs,mBECXTZDASA~.HAVEmCOMPLY.”qAddentryfortheSCOPE*pua4m@1.1(~e):handbookisforguibceonlyandshallnotbecitdasathecontrmtor&e8nothavetoIfitia,requir~t.coa@y.“anIfYOUhaveanYuuestimcontactMa.CarlaJ~.r~thbreQueat,plea-WaltezCouncilcc:B.Chaiman,DefenseStandadaBe%+,11=mrQV’--tOVSD(A&T)~~&E/SE,Mr.M.Zsak1-2sNewPage-.Ma1I11MIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTSThishandbookcitessomespecificationswhichhavebeencancelledorwhichdescribedevicesthatarenottobeusedfornewdesign.Thisinformationisnecessarybecausesomeofthesedevicesareusedinso-called“off-the-shelf”equipmentwhichtheDepartmentofDefensepurchases.Thedocumentscitedinthissectionareforguidanceandinformation.SPECIFICATIONSECTION#TITLEMIL-C-510.1Capacitors,Fixed,MicaDielectric,GeneralSpecificationforM!L-R-l19.1Resistor,Fixed,Composition(Insulated),GeneralSpecificationforMIL-R-199.1Resistor,Variable,Wirewound(LowOperatingTemperature)GeneralSpecificationforMIL-C-2010.1Capacitor,Fwed,CeramicDielectric(TemperatureCompensating),EstablishedReliabilityandNonestablishedReliability,GeneralSpecificationforMIL-R-229.1Resistor,Variable,Wirewound(PowerType),GeneralSpecificationforMIL-C-2510.1Capacitor,Fixed,Paper-Dielectric,DirectCurrent(HermeticallySealedinMetalCases),GeneralSpecificationforMIL-R-269.1Resistor,Ftxad,Wirewound(PowerType),GeneralSpecif~ationforMIL-T-2711.1TransformerandInductors(Audio,Power,HighPowerPulse),GeneralSpecifiitionforMIL-C-6210.1Capacitor,FuedElectrolytic(DC,Aluminum,DryEkctrotyte,Poladzad),GeneralSpecificationforMIL-G8110,1Capacitor,Variable,CeramicDielectric,GeneralSpecificationforMIL-C-9210.1Capacitor,Variable,AirDielectric(Trimmer),GeneralSpecificationforMIL-R-939.1Resistor,Fixed,Wirewound(Accurate),GeneralSpecificationforMIL-R-949.14Resistor,Variable,Composition,GeneralSpecMcationforMIL-V-9523.1Vibrator,InterrupterandSelf-Rectifying,GeneralSpecificationforW-L-11120.1Lamp,IncandescentMiniature,TungstenFilamentW-C-37514.5CircuitBreaker,MoldedCase,BranchCircuitandSewiceW-F-172622.1Fuse,Cartridge,ClassH(thiscoversrenewableandnonrenewable)W-F-181422.1Fuse,Cartridge,HighInterruptingCapacityMIL-C-309.1CqmtalUnit,Quartz,GeneralSpecificationforMIL-C-36075!1Connector,Coaxial,RadioFrequency,SeriesPulse,GeneralSpecificationsforMIL-C-3351Connector,Coaxial,RadioFrequency,SeriesHNandAssociatedFittings,GeneralSpecificationforSupersedespage2-1ofRevisionF2-1--—3..tiz~auMIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTSMIL-G3650MIL-C-365515.115.114.314.1Connector,Coaxial,RadioFrequency,SeriesLCCormector,PIIJgandReceptacle,Electrical(CoaxialSeriesTwin)andAssociatedFittings,GeneralSpecificationforMIL-S-3786Swrtch,Rotary(CircuitSelector,Low-Current(Capacity)),GeneralSpecificationforSwitch,Toggle,EnvironmentallySealed,GeneralSpecificationforMIL-S”3950MIL-G396510.115.1Capacitor,Fixed,Electrolytic(NonsolidElectrolyte),Tantalum,GeneralSpecificationforConnector,Electrical,CkoularThreaded,ANType,GeneralSpecificationforFuse,CurrentLimiterType,AkcraftSwitches,Toggle,ElectricallyHeldSealed,GeneralSpecificationforRelays,Electromagnetic,GeneralSpecificationforMIL-C+O15MIL-F-5372MIL-S-5594MIL-R-5757MIL-R-610622.114.113.113.120.114.1,14.214.114,114,114.118.19.110,1Relay,Electromagnetic(IncludingEstablishedReliability(ER)Types),GeneralSpecificationforLamp,Incandescent,AircraftService,GeneralSpecificationforML-L-6363MIL-S-8805SwitchesandSwttchAssemblies,SensitiveandPush(SnapAction),GeneralSpedkatiinforSwitches,Toggle,PositiveBreakGeneralSpecificationforSwitches,PressurerAircraft,GeneralSpecificationforMIL-S-8834MIL-S-32MIL-S-9395Switches,Pressure,(Absolute,Gage,andDifferential),GeneralSpecificationforSwitch,Toggle,MomentaryFourPositionOn,CenterOff,GeneralSpecificationforMeter,ElectricalIndicating,PanelType,Ruggedized,GeneralSpecificat”mnforResistor,FixedFilm(HighReliability),GeneralSpecificationforCapacitor,Fixed,M’kaDielectric,ButtonStyle,GeneralSpecificationforCapacitor,Fixed,CeramicDielectric(GeneralPurpose),GeneralSpecificationforCapacitor,Fixed,GlassDielectric,GeneralSpecificationforMIL-S-9419MIL-M-10304MIL-R-10509MIL-GI0950MIL-C-11OI510.110.1MlL-C-l12722-2Supersedespage2-2ofRevisionFMIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTSMlL-C-l169310.1Capacitor,FeedThrough,RadioInterferenceReductionACandDC,(HermetkallySealedinMetalCases)EstabiishdReliability,GeneralSpecificatbnforandNonestablishedMlL-R-l1804MIL-S-12211MlL-S-l2285MIL-S-128839.114,14.115.310.1Resistor,Fixed,Film(PowerType),GeneralSpecificat”mnforSwitch,PressureSwitches,ThermostaticSocketsandAccessoriesforPlug-hElectronicComponents,GeneralSpecificationforCapacitor,By-f%ss,Radio-InterferenceReduction,PaperDielectric,ACandDC,(HermeticallySealedinMetaiiicCases),GeneralSpecificatbnforResistor,Variabie,Wirewound,Precision,GeneralSpecificationforSwitch,Sensitive:30VottsDirectCurrentMaximum,WaterproofMIL-G128M!L-R-12934MIL-S-13484MIL-C-13516MIL-S-13623MIL-R-13718MIL-S-13735MIL-G144099.114.114.214.113.114.110.1CircuitBreakers,ManualandAutomatic(28VoitsDC)Switches,Rotary:28VoitDCReiays,ElectromagneticSwitches,Toggle:2824VoltDCvoltDCCapacitor,Vadable(PistonType,TubuiarTrimmer),GeneralSpectfioatbnforFuse,instrument,PowerandTeiephoneSwitches,Rotary,SnapActionandDetenVSpringReturnAction,GeneralSpecificationforCoils,Electrical,FixedandVariable,RadioFrequency,GeneraiSpecificationforCouplers,Directional,GeneraiSpecificationforFiitersandCapacitors,RadioFrequencyInterference,GeneraiSpecificationforSwitches,MIL-F-15160MIL-S-1S29122.114.1MIL-C-1530511.2MIL-G15370MIL-F-1573315.121.1MIL-S-15743MIL-G1831214.110.1Rotary,EnclosedCapacitor,Fixed,Metallized(Paper,PaperPiasticorPiasticFilm)Dielectric,DirectCurrent(HermeticallySealedinMetalCases),GeneralSpecificationforMIL-F-1832721.1‘Filter,HighPass,LowPass,BandPass,BandSuppressionandDualFunctioning,GeneralSpecificationforSupersedespage2-3ofRevisionF2-3tvllL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTS—ML-R-18546MlL-S-l9500MIL-R-19523MIL-R-198MIL-G1997.16.013.113.110.1Resistor,Fixed,Wkewound(PowerType.ChassisMounted),GeneralSpecificationforSemiconductorDevice,GeneralSpecificationforRelays,ControlRelay,Time,Delay,Thermal,GeneralSpecif”~at”kmforCapacitor,FixedPlastic(orPaper-Plastic)Dielectric(HermeticallySeaJedinMetal,CeramicorGlassCases),EstablishedandNonestablishedReliaMlity,GeneralSpecificat”bnforTransformer,Puke,LowPower,GeneralSpecificationforConnedor,Electrical,PrintedWkingBoard,GeneralPurpose,GeneralSpecificationforSwitches,L“quidLevel,GeneralSpecificationforCcmnectors,PlugandReceptacle-ElectricalRectangular,PolarizedShell,MiniatureTypeResistor,Variable,NonwirewmndSpecificationforSwitches,SensitiveResistor,FMed,Film,Insulated,GeneralSpecifioatiinforIn-1ine(AdjustmentTypes),GeneralMIL-T-21038MIL-G21097MIL-s-212nMIL-G21617MIL-R-22097MIL-S-22614MIL-R-226MIL-S-2271OMIL-S-22865MIL-G2299211.115.114.115.19.114.19.214.4Switches,CodeMcatingWheel(PrintedCircuit),(Ttwmbwheel,andPushbutton),GeneralSpecificationforSwitches,Pushbutton,Illuminated,GeneralSpecif”utionfor14,115.1Connectors,PlugsandReceptacles,Electrical,Water-ProOf,QuickHeavyDutyType,GeneralSpecificationforDi-nnect,Capacitors,FixedorSpecificationforMIL-C2316310.1Variable,VacuumorGasDielectric,GeneralMIL-CX2326910.1Capacitor,Fixed,GlassDielectric,EstablishedReliability,GeneralSpecificationforResistor,Variable,Nonwirewound,GeneralSpecificat”mnforFuse,Caflridg8,InstrumentType,GeneralSpecificationforResistor,Thermal,(ThermallySensitiveResistor),Insulated,GeneralSpecificationforConnector,Plug-Receptacle,Female,7.5AmpsConnector,Plug-Receptacle,7.5AmpsElectrical,Hexagonal,9Contacts,MIL-R-23285MIL-F-23419MIL-T-23.122.19.1MS-2405515.1MS-2405615.1Electrical,Hexagonal,9Contacts,Male,2-4Supersedespage2-4ofRevisionFMIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTSMIL-C-2430815.114,1Connectors,Eiectric,Rectangular,Nonerwironmental,Miniature,PolarizedShell,RackandPanel,GeneralSpecdicatbnforSwitches,Mu!tistation,Pushbutton(IlluminateGeneralSpecificationforandhlon-l!luminated),MIL-S-24317MIL-C-2551615.1Connector,Electrical,Miniature,Coaxial,EnvironmentResistantType,GeneralSpecificationforConnector,Electrical(Wcular,Miniature,QuickDisconnect,EnvironmentResisting),ReceptaclesandPlugs,GeneralSpecificat”bnforConnectors,GeneralPurpose,Electrical,Miniature,Ckcular,EnvironmentResisting,GeneralSpedficat’bnforResistor,Variable,Wlrewound,Nonprecis”on,GeneralMIL-C-28215.1ML-C-2650015.19.115.1MIL-R-27208Specificat’mnforMIL-C-28731Connectors,Electrical,Rectangular,RemovableContact,FormedBlade,ForkType(ForRackandPanelandOtherApplicat”bns),GeneralSpecificationforConnector,PlugandReceptacle,Rectangular,RackandPanel,SolderTypeandCrimpTypeContacts,GeneralSpecifiiionforRelay,Sol”dState,GeneralSpecificationforConnectors,PlugandReceptacle,ElectrioRectangular,HighDensity,PolarizedCenterJackScrew,GeneralSpecificationfor,InactiveforNewDesignsConnector,Electrical,CircularThreaded,HighDensity,HighShockShipboard,ClassD,GeneralSpecificationforMicrocircuits,GeneralSpecificationforSockets,ChipCarrier,Ceramic,GeneralSpecificationforHybridMicmcirdts,IntegratedWcuitsSpedficatiOnforGeneralSpecificationfor(Microcircufis)Manufacturing,GeneralMIL-C2874815.1MIL-R-28750MIL-C-2880413.215.1MIL-G28840MIL-M-3851OMIL-S-385=MIL-H-38534MIL-I-3853515.15.015.35.05.0MIL-G39915.1Connector,Ekctrical,Circular,Miniature,HighDensity,QuickDisconnect,(Bayonet,Threaded,andBreechCoupling)EnvironmentResistant,RemovableCrimpandHermeticSolderContacts,GeneralSpecificationforMIL-G39001MIL-R-3900210.19.1Capacitor,Fixed,Mica-Dielectric,EstablishedReliability,GeneralSpecificationforResistor,Variable,Wkewound,Semi-Precision,forGeneralSpecificationMIL-C-3900310.1Capacitor,Fixed,Electrolytic,(SolidElectrolyte),Tantalum,EstablishedReliability,GeneralSpecificationforSupersedespage2-5ofRevisionF2-5MIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTS—MIL-R-39005MIL-G39006MIL-R”39007MIL-R-39008MIL-R-39009MIL-G3901OMIL-C-39012MIL”C-390149.110.19.19.19.111.215.110.1Resistor,Fixad,Wirewound(Accurate),EstablishedReliability,GeneralSpecificationforCapacitor,Fixed,Electrolytic(NonsolidElectrolyte)TantalumEstablishedReliability,GeneralSpecificationforResistor,Fixed,Wkewound(PowerType),EstablishedReliability,GeneralSpecificationforResistor,Fixed,Composition(Insulated),EstablishedReliability,GeneralSpecificationforResistor,Fixed,WmMVOund(PowerType,ChassisMounted)EstablishedReliabiiii,GeneralSpecificationforCoils,Electrical,FMed,RadioFrequency,Molded,EstablishedReliability,GeneralSpecificationforConnector,Coaxial,RadioFrequency,GeneralSpecificationforCapacitor,Fixed,CeramicDielectric(GeneralPurpose),EstablishedReliability,GeneralSpecificationforResistor,Variable,Wlrewound(LeadScrewActuated),EstablishedReliatWty,Genera!SpecificationforRelay,Electromagnetic,forEstablishedReiiabiiity,GeneralSpecificationMIL-R-39015MIL-R-39016MIL-R-39017MIL-C-39018MIL-G39019MIL-C-390229.113.19.110.1Resistor,Fued,Fiim(Insulated),EstablishedReiiabNty,GeneralSpecif.kdonforCapacitor,Fwed,Ekctrofytic(AluminumOxide),EstablishedReliabilityandNonestablishedReliability,GeneralSpecificationforCircuitBreakers,Magnetic,LowPower,Seaied,Trip-Free,GeneralSpecificationforCapacitors,Fixed,Metaiiued,Paper-PlasticFilmorPiasticFilmDielectric,DirectandAlternatingCurrent(HermeticallySealedinMetalorCeramicCases),EstablishedReliability,GeneralSpecificationforResistor,Variabie,Nonwirewound,Precision,GeneraiSpecificationforResistor,Variable,Nonwirewound(AdjustmentType),EstablishedRel.&ility,GeneralSpecificationforSwitch,RotaryConnectors,PiugsandReceptacle,EiectricaiTriaxiai,RadioFrequency,GeneraiSpecificationforConnectors,PlugandReceptacle,Teiephone,Eiectrcal,SubassemblyandAccessoriesandContactAssembiy,Electrical,GeneralSpecificationforPrintedWiringBoard,GeneralSpecifi~tionResistor,FIxd,14.510.1MIL-R-39023MIL-R-39035MIL-S-45885MIL-C-491429.19.114.115.1MIL-G5507415.1MIL-P’55110MIL-R5518215.291forFilm,Es!abl(shedReliability,GeneralSpecificationfor2-6Supersedespage2-6ofRevisionFMII--HDBK-217FNOTICE22.0REFERENCEDOCUMENTSMIL-C-55235MIL-C-55302MIL-A-5533915.115.115.19.110.114.110.1Connectors,Coaxial,RadioFrequency,SeriesTPSConnector,PrintedCircuit,SubassemblyandAaessoriesAdaptors,Connector,Coaxial,RadioFrequency,(BetweenSeriesandWithinSeries),GeneralSpecificationforResistors,Fixed,Film,Chip,EstablishedReliability,GeneralSpecificationforCapacitor,Fixed,Electrolytic(Tantalum),Chip,EstablishedReliability,GeneralSpecificationforSwhches,Reed,GeneralSpecificationforCapacitors,Freed,Plastic(orMetallizedPlastic)Dielectric,DCorDC-AC,InNon-MetalCases,EstablishedReliability,GeneralSpecificationfor)CircuitBreaker,Magnetic,Unsealed,orPanelSeal,Trip-Free,GeneralSpecificationforTransformer,IntermediateFrequency,RadioFrequencyandDiscriminator,GeneralSpecificationforCapacitor,Chip,MultipleLayer,Fixed,UnencapsulatedCeramicDielectric,EstablishedReliability,GeneralSpecificationforMIL-R-55342MIL-C-55365MIL-S-55433MIL-C-55514MIL-G55629MIL”T-55631MIL-G55681MIL-G8151114.511.110,115.114.115.114.114.59.110,1Connedor,Electriil,Circular,HghDensky,OuickDisconnect,EnvironmentResistingandAccessories,GeneralSpecificationforMIL-S-81551MIL-C-81659MIL-S-82359MIL-(X3383Switches;Toggle,HermeticallySealed,GeneralSpecificationforConnectors,ElectricalRectangular,CrimpContactSwitch,Rotary,VariableResistorAssemblyTypeCircuitBreaker,RemoteControl,Thermal,Trip-Free,GeneralSpecificationforResistorNetworks,Fixed,FilmandCapacitor-ResistorNetworks,CeramicCapacitorsandFixedFilmResistors,GeneralSpecificationforCapacitors,FreedMetalluedPlastiiFilmDielectric(DC,ACorDCandAC)HermeticallysealedinMetalorCeramicCases,EstablishedReliabil”~,GeneralSpecificationforCoils,RadioFrequency,Chip,FixedorVariable,GeneralSpecificationforCapacitor,Fixed,Electrolytic(NonsolidElectrolyte),TantalumCathode,GeneralSpecificationforSwitches,DualIn-LinePackage(DIP),GeneralSpecificationforConnector,Electrical,Rectangular,Microminiature,PolarizedShell,GeneralSpecificationforMIL-R-83401MIL-C-83421MIL-C+3446‘11.210,114,115.1MIL-C-83500MIL-S-83504MIL-C-83513NewPage2-7_-e_-.—----——..—--—--=—=—a=—==.—a.-A._-...._...___.________—————MIL-HDBK-217FNOTICE22.0REFERENCEDOCUMENTSMIL-C-83515MIL-R-83516MIL-C-83517MIL-R-83520MIL-G8352715.113.115.1Connectors,Telecommunication,forPolarizedShell,GeneralSpecificationRelays,Reed,Dry,GeneralSpecificationforConnectors,Coaxial,RadioFrequencyforCoaxial,StriporMicrostrpTransmissionLine,GeneralSpecificationfor13.115.1Relays,Electromechanical,GeneralPurpose,Non-HermeticallySealed,PlasticEnclosure(DustCover),GeneralSpecificationforConnectors,PlugandReceptacle,Electrical,RectangularMuttipleInsertType,RacktoPanel,EnvironmentResisting,15~CTotalContinuousOpemtingTemperature,GeneralSpecificationforMIL-R-8353613,1Relays,Electromagnetic,forEstablishedReliability,GeneralSpecificationMIL-C-8372315.113.113.1,13.2,13.314.115.1Connector,Electrical(CircularEnvironmentResisting),ReceptaclesandPlugs,GeneralSpecificationforRelay,Vacuum,GeneralSpecificationforRelays,HybridandSolidState,TimeDelay,GeneralSpecificationforM!L-R-83725MIL-R-83726MIL-S-83731Switch,Toggle,UnsealedandSealedToggle,GeneralSpecificationforMIL-G83733Connector,Electrical,Miniature,RectangularType,RacktoPanel,EnvhnmentResistkg,XKY’CTotalContinuousOperatingTemperature,GeneralSpecifiiionforMIL-S-8373415.315.1Sockets,Plug-InElectronicComponents,Dual-In-Line(DIPS)andSingle-In-LinePackages(SIPS),GeneralSpecificationforMIL-M5028Connector,Electrical,Rectangular,IndividualContactSealing,PolarizedCenterJackScrew,GeneralSpecificationforSTANDARDMIL-STD-756MIL-STD-683MIL-STD-975MIL-STD-1547MIL-STD-1772ReliabilityModelingandPredictionTestMethodsandProceduresforMicroelectronicsNASAStandardElectrical,ElectronicandElectromechanical(EEE)PartsListElectronicParts,MaterialsTechnicalRequirementsforandProcessesforSpaceandLaunchVehicles,CertificationRequirementsforHybridMicrocircuitFacilitiesandLinesCopiesfunctionsofspecificationsdirectedbythecontractingofficer.Singlecopiesarealsoavailable(withoutcharge)uponwrittenrequestto:activityorasandstandardsrequiredshouldbeobtainedfromthecontractingbyContracbrsinconnectionwithspecificacquisitionStandardizationOocumentOrderDesk,700RobimAVe,Wilding~,sectionD,Ph(ladelphla,PA19111-5094,(215)697-26672-8NewPageMIL-HDBK-217FNOTICE25.1MICROCIRCUITS,GATE/LOGICARRAYSANDMICROPROCESSORSDESCRIPTION1.BipolarDevices,DigitalandLinearGate/LogicArrays2.MOSDevices,DigitalandLinearGate/LogicArrays3.FieldProgrammableLogicArray(PLA)andProgrammableArrayLogic(PAL)4,Microprocessorskp=(clfi~+C2fiE)~QfiL‘ailures~l06HoursTItDigitalandLinearGate/LogicArrayDieComplexityFailureRate-ClPLA/PALLinearDigitalNo.Gatesc,No.Transistof$No.GatesIc,100to101to1,0001,001to3,0003,001to10,00010,001to30,00030,001to60,0001-c,I.0025.0050.010.020.040.0801to101to301to1,001to1003001,00010,000.010.020.040.060upto200201to1,0001,001to5,000.010.021.042~LinearandDigitalGate/LogicArrayDieGomplex~FailureRate-ClvLinearNo,TransistorqDigitalNo.Gates1totoc,Ic,.010.020.040.060PLA/PALNo.Gatesupto500c,.000851,001to3,0003,001to10,00010,001to30,00030,001to60,0001011001,000.010.020.040.080.16.2911013011,001totototo1003001,00010,000501to1,0002,001to5,0005,001to20,000.0017.0034.0068‘NOTE:ForCMOSgatecountsabove60,000usetheVi+SIC/VHSIC-LikerocmDieComplexi~FailureRate-ClMO.Sc,.060.12.24,14modeiInSection5.3E=F==7Upto8Upto16Upto32LSupersedes-—_=...=------page5-3\\AllOtherModelParametef’sRefertoParameter1XT,Section5.8section5,9Section5.10AC27tE,flQ,XL.28,56ofRevision.FAllGAQ=*QAW-w......-.5-3,-------_____-_——__baw.-“-....-=------MIL-HDBK-217F5.2MICROCIRCUITS,MEMORIES—DESCRIPTION1.ReadOnlyMemories(ROM)2.ProgrammableReadOnlyMemories(PROM)3.UltravioletEraseablePROMS(UVEf’ROM)4.“Flash,”MNOSandFloatingGateElectricallyEraseablePROMS(EEPROM).Includesbothdfloatinggatetunneloxide(FLOTOX)andtexturepolysilicontypeEEPROMS5.StaticRandomAccessMemories(SRAM)R~vnamicRandomAccessMemories(DRAM)w._=..—kp=(C1XT+C2YCE+Acyc)XQXLFailures/l05HoursDieComplex~PROM,FailureRate-ClMOsDRAM.0013.0025.0050.010BipolarSRAMt,MemorySize,B(Bits)ROM.00065.0026.0052UVEPROM*EEPROM,mPROM.00085.0017.0034.0068(MOS&BiMOS).0078.016.031.062ROM,PROM.0094.019.038.075SRAM.0052.021.042upto16K16K
1GHzF~FAllOtherHybridModelParametersI1.01.22.65.821I~~,~Q,~EIRefertoSection5.10IILinear,f<10MHzPowerMIL-HDBK-217F5.6MICROCIRCUITS,SAWDEVICESDESCRIPTIONSurfaceAcousticWaveDevicesQualityFactor-ZQScreeningLevel10TemperatureCycles(-55°Cto+125°C)withendpointektrkdtestsattemperatureextremes.Nonebeyondbestcommetil7CQEnvironmentalFactor-nE—EnvironmentGB%~E.52.04.04.06.04.05.05.08.08.0.505.042220.101.0practices.%NsNuAlc‘IF%c‘UF‘RWSFMFMLCL5-1oMIL-HDBK-217FNOTICE2MICROCIRCUITS,EXAMPLES5.13-iimrimimNo.ofPinsPowerDissipation,pD(W)AreaofChip(in.*)8.3314.35.006519.472%rFFir3.6.002550.395TrFiF3.6.002550.395SiDiode2.42.002256.3SourceVendorSpec.SheetCircuitAnalysisEqu.2AboveEqu.1AboveEqu.3Above.004130.875eJ~(%NV)TJ(%)2.CalculateFailureRatesforEachComponent:A)LMI06Die,13Transistors(fromVendorSpec.Sheet)Section5.1BecauseC9=O;XT:%WiOn5.8;XQ,XLDefau~to1.0,=B)(.01)(3.8)(1)(1)=.038Failure#l06FloursLM741Die,23Transistors.UseSameProcedureasAbove.$=clXT~QXL=(.01)(3.1)(1)(1)=’031‘ailured1065W(FromVendor~ec.‘oumVcE~CE()=.6,c)SificonNPNTransistor,LinearApplication~==RatedPower=Sheet),%~T~AnR%ZQXESOCtiOn6.3;nA,~Qt~Eoefau~to1.0(.00074)(3.9)(~.0)(1.8)(.29)(1)(1).0015Failures/l06Hours6D)SiliconPNPTransistor,SameasC..0015Failures/l06HoursE)SiliconGeneralConstruction.‘P===PurposeDiode(Analog),VoltageStress=600/’,MetallurgicallyBondedk)‘T%‘C‘Q‘E(.0038)(6.3)(.29)(1)(1)(1).0069Failures/l06HoursSection6.1;ZQJXEDefau~to1.0Supersedespage5-23ofRevisionF5-23MII--HDBK-2I7FNOTICE25.13MICROCIRCUITS,F)EXAMPLESCeramicChipCapacitor,‘A=VottageStress=50Y0,‘CASEfortheHybrid,1340pF,125°CRatedTemp.‘P===lbncv~Q~E06HoursSection10.11;XQ,~EDefaultto1.0(.0028)(1.4)(1)(1).0039Failures/lG)ThickFilmResistors,perinstructionsinSection5.5,thecontributionofthesedevicesisconsideredinsignificantrelativetotheoverallhybridfailurerateandtheymaybeignored.%~E=[ZNcLc](l6.05.81+.27cE)71F7ypLSection5.10Section5.5Section5.10Section5.10===fiFICQXL%==1[(1)(.038)+(1)(.031)+(2)(.0015)+(2)(.0015)(5,8)(l)(1)+(2)(.0069)+(2)(.0039)](1+.2(6.0))=1.2Failures/l06Hours%5-24Supersedespage5-24ofRewsionFMIL-HDBK-217F6.0DISCRETESEMICONDUCTORS,INTRODUCTIONThesemiconductortransistor,diodeandopto-electronicdevicesectionspresentthefailureratesonthebasisofdevicetypeandconstruction.AnanalyticalmodelofthefailurerateisalsopresentedforeachThevarioustypesofdiscretesemiconductordevicesrequiredifferentfailureratedevicecategory.modelsthatvarytosomedegree.Themodelsapplytosingledevicesunlessotherwisenoted.FormultipledevicesinasinglepackagethehybridmodelinSection5.5shouidbeused.TheapplicableMILspecificationfortransistors,andoptoelectronicqualitylevels(JAN,JANTX,JANTXV)areasdefinedinMIL-S-19500.ThetemperaturedevicesisMlL-S-lJu~tiOn9500.Thefactor(XT)isbasedOnthedeviceJunctiontemperature”temperatureshouldbecomputedbasedonworsecasepower(ormaximumpowerdissipation)andthedevicejunctiontocasethermalresistance.DeterminationofjmctbntemperaturesisexpiairwdinSection6.14.Reference28shouldbeconsultedforfurtherdetailedinformationonthemodeisappearingh’!thissection.6-1MIL-HDBK-217FNOTICE26.1DIODES,LOWFREQUENCYDESCRIPTIONLowFrequenCyDiodes:GeneralPurposeAnalog,Switching,FastRecovery,PowerRectifier,TransientSuppreswr,CurrentRegulator,VoltageRegulator,VoltageReferenceSPECIFICATIONfvllL-s-19500BaseFailureRate-~DiodeTyDe/Application,.-.I%TemperatureFactor-~(VoltageRaguktoandCurreTJ(~)25%TS!?94!aTJVottageReference,GeneralPUIPOWAnalogSwitchingFastRecoveryPowerRectifierPowerRectifier/SchoflkypowerDiodePowerRectifierwithHighVoltageStacksTransientSuppressorNaristorCurrentRegulatorVottageRegulatorandVoltageReferencx?(Avalanche.0038~).0010.025.0030.0050/Junction1.01.11.21.41.5105.0013.0034.0020andZener)Terrperatum(GeneralPurrmseAnakPovTJ(oC)qFactor-XTSwitching,nsientSuFastRmvwY,rsor%T5T~(“C)1053035404550556065707580859095100XT=It=bJIexp1101151201251301351401451501551601651701753.94.24.54.85.15.45.76.06.46.77.17.57.98.38.741.61.82.02.12.32.52.73.03.23.43.7251.01.21.41.61.92.22.63035404550556065707580859095100~T=Eexp3.03.43.94.45.05.76.47.28.01101151201251301351401451501551601651701759.01011121415161820212325283032((-19251‘-—TJ+2731298))JunctionTemperature(“C)II((.3091—-—TJ~27311“298))J=JuncllonTemperature(“C)16-2Supersedestpage6-2ofRevisionFMIL-HDBK-217FNOTICE27.2TUBES,TRAVELINGWAVEDESCRIPTIONTravelingWaveTubes~=+pEFailures/l06HoursBaseFailureRate-~power~Environment\\1442424218616161EnvironmentGBFactor-ZF~E.5,111111111111212121314151711212121212131313141516182131313131414141515161820Frequency(GHz)6810416192429162024291620242916202429U@1720242943@1720253044U17212631ti182226321923273320242935222632392429354310;Z1000IrGFI1.57.03.0105.07.06.09.020.051133GMNs30005000800010000150002000030000>40000~~515662S~y758391NUAlc‘IF‘Uc‘UFk)”PF=-11(1.00001)P(1.l)FRatedPowerInWatts(Pew,lfpum,.001sP<40,000OperatingFrequencyInGHz,.1SFS18isaband,ortwodifferentAmSFMFvalues,usethegeometdcmeanoftheendpointifrequendeswhenusingtable.Iftheoperatingfreque~IMLc,I500Supersedes———page7-3ofRevisionF7-3--------—----*-+-*-MIL-HDBK-217F7.3TUBES,MAGNETRONDESCRIPTIONMagnetrons,PulsedandContinuousWave(CW)Lp=kb7r”7cc7tEFailures/l06HoursBaseFailureRate-~Frequency(GHz)P(MW).1.515102030405060708090100.011.491110130150170190200220.051.94.66.37.6102434415667‘3120150180210230260280300.12.27.21239~110140180210240270290320350.32.81548801301802202603003303704004309.o.53.11017541502002@2903303704104404803.51119100170230280~o380420470510550:4.41424:1302102W3=410470530580830~o526~230310390@520Wo~o700760-I4.916140PulsedMagnetrons:CWMagnetrons(RatadPower<5KW):b=19(F)-73(P)-20$-18F=operatingFrequenCyinGHz,.15F<100P=outoutPowerinMW,.01SP<5LMllizationFactor-ZIIEnvironmentFactor-nE~EUtilization(RadiateHOUN7uEnvironmentFilamentHoufS)%UGB1.00.0.440.1.50IGFI2.0I0.2.550.3.61IGM4.00.4.66Ns15I0.5.720.6.78Nu470.7.830.8.*IC100.9.94‘IF16*UC12I23Xu=0,44+0.56RII‘UFiAntfil-‘nvv80R=RadiateHourWFilamentHoursIConstructionFactor-ncML7133Construction7tcriCL2000ICW(RatWPower.5~I1.0ICoaxialPulsed1.0ConventionalPulsedI5.47-4MIL-HDBK-217FNOTICE29.1RESISTORS~TTabieResistorStyleSpecificationMiL-R-1139008Description%.0017UseColumn:11XSTableUseColumn:22iRcRCRResistor,Fixed,Composition(Insulated)Resistor,Fixed,Composition(Insuiated)Est.Rel..0017.0037.0037.0037.0037.0037.0037,0019.0024.0024.0024RLRLRRN(R,COfN)RMRNRDRZRBRBRRWRWRRERERRTHRTRTRRRRARKRPRJRJRRVRQRVC2268439017551825534210509118048340193390052639007185463900923827208390151293419.39002222209739035943902323285Resistor,Fixed,Film,InsuiatedResistor,Fixed,Film(Insulated),Est.Rei.Resistor,Fixed,Film,Est*iishdReiiabMyReiiabiiity22222WA,XT=11222111111NIAns=1Resistor,Fued,Fiim,Chip,EstabiistiResistor,FixedFilm(HighSttitiity)Resistor,Fixed,Film(PowerTYW)ResistorNetworks,Fixed,FilmResistor,Fixed,Wkewound(Accurate)Resistor,Fixed,WirewoundResistor,Fixed,Whwound112(/@curate)Est.Rel.(PowerTyTw)ReLResistor,Fiied,Wkewound(PowerType)Est.Resistor,I%ed,Whewound(PowerTYPS,Ch-kMounted)Resistor,Freed,Whewound(PowerType,ChassisMounted)Est.Rel.Thermistor,(ThermallySensitiveResistor),InsuiatedResistor,Variabie,Wirewound(LeadScrewActivated)Resistor,Variable,Wirewound(LeadScrewActivated),EstablishedReliabilityResistor,Variabie,Wwewound,PrecisionResistor,Variable,Temperature).0024.0024.0024.0019.0024.0024.0024.0024.0024.0024.0037.0037.0037.0037.0037222N/A,XT=2221t’lrots=~1111111111122211222211Wkewound(LowOpwatingResistor,Variable,Wkewound,Semi-PrecisionResistor,Wkewound,PowerTypeResistor,Variable,NonwirewoundResistor,Variable,NonwirewoundEst.Rel.Resistor,Variabie,CompositionResistor,Variable,NonwireWound,PrecisionResistor,Variable,NonwirewoundSupersedesSection9.0-9.17ofRevisionF9-1.MIL-HDBK-217FNOTICE29.1RESISTORS-—PowerFactor-Xp,Column2.951.11.21.31.41.5lowerDissipation(Watts)TemperatureFactor-XT-T(”C)2030405060708090100110120130140Column1,881.11.51.82.32.83.44.04.85.66.67.68.710np.068.17.44.58.76.1.01.31.51.71.92.53.54.66.017.1.001.01.13.25.50.751.02.03.04.05,01025501001.61.71.92.02.12.32.42.5‘T=exp—(-Ea.51(m-=1))1508.6I7x1Ooiumn1:Ea=.2olumn2:Kp-(PowerDissipation)”3gEa-.08=ResistorCaseTemperature.Canbeapproximate~asambientcomponenttemperatureforlowpowerdissipationnon-powertyperesistors.IOTE:XTvaiuesshownshddonlybeuseduptothetemperatureratingofthedevice.Fordeviceswithratingshigherthan150°C,usetheequationtodeterminenT9-2SupersedespageSection90-9.17ofRevisionF—.-..MIL-HDBK-217FNOTICE210.1CAPACITORS~p=~nTxcnvx~RfiQ~EFailures/106fiT~C)iJfSTable-UsenCTable-UsexvTable-Use;apacitorStylePSpec.MIL-C-25Description%.00037Colurnm1Column:1Column:1%R1Capacitor,Fixed,Papr-Dielectrk,DirectCurrent(Hermeti=l~SealedinMetalCases)Capacitor,By-Pass,Radio-InterferenmReductbn,PaperDieledrb,ACandDC(Hermetial~sealedinMetallic128.000371111Cases)11693Capacitor,Feedthrough,RadioInterferenceReductionACandDC(Herm@W~scaldinmetalcases),EstablishedandblonestablishedReliabil”~.000371111n,CQR19978Capacitor,FixedPlastic(orPaper-Pl=tk)Dielectric(Hermetial~sealedinmetal,oaramicorglasscases),.000511111EstabkhdReliabilityandNonestWishd.000371111,x-i18312@pacitor,(P~r,Film)Dielectrk%DirectCurrent(1-iermetkal&SealedinMetal~Ked,MetallizdPaprPlastborPlastbCases)39022Capacitor,Fixed,MetallizdPaper,Paper-Pi-ticFdrnorPlasticFilmDielectricCapachor,Fixed,Plastic(orMetallizedPlastic)Diokctrk,Dire@CurrentinNon-MetalCasesCapacitor,FixedSupermetdludPlasticFilmDkdectrii(DC,ACorDCandAC)Hermetical&Sealed.00051111155514.00051111183421.000511111-iinMetalCases,EstablishReliabilityCM539001C8CYCYR109501127223269Capacitom,Fixed,M’kaDielectricCapacitor,Fixed,MicaDielectric,EstablishedReliabilhyCapacitor,Fixed,MicaDielectric,ButtonStyleCapacitor,Fixed,GlassDieiectricCapacitor,Fixed,GlassDielectric,EstablishedReliability.00076.00076.00076.00076.00076i2222211111222221111110-1SupersedesIOcvSection.I10.1-10.20m.I1ofRevisionFmlIuw>16—>1MIL-HDBK-217FNOTICE210.1CAPACITORS4n~Table-ncTable-XvTable-CapacitorSpec.Description%UseUseuse%RStyleMIL-C-Column:Column:Column:.000992131CK11015Capacitor,Fixed,CeramicDielectric(GeneralPurpose).000992131CKR39014Capacitor,Fixed,CeramicDielectrk(GeneralPurpose),EstablishReliabiltiycC,CCR20CapaCitor,Fixed,Ceramic.000992131Dielectti(Tem~ratureCompensating),EstablishandINonestablishdRelitil~55681Capacitor,Chip,MuttipkLayer,.00202131FMed,CeramkDieled~c,EstablishedReiiabil~24SeeCSR39003Capacfior,Fixed,Electro~ic.00040‘1(SolidElectrolyte),Tantalum,%REstablishedReliabilityTable24See55365Capacitor,Fixed,Electro~ic.000051(Tantalum),Chip,Established%RReliabilityTabler41CL3965Capackor,Fued,Electro~ic.0004012(NonsoitiElectro~e),Tantalum,4139006Capackor,Fixed,Ek@ro~k.0004012(NonmldElectI’o~e),Tantalum,EstablishReliabil~183500Capacfior,Fixed,Electro~ic.000401241(NonsolidEle@o~e),TantalurnCathodecU,CUR39018Capacitor,Fixed,Ebctro~ic.000122211(AluminumOxide),EstablishedReliabil”~andNonestablish*ReliabilityILCE62Capacitor,FixedElectrolytic(DC,.000122211Aluminum,DryEle@o~e,Polarized)1151Cv81Capacitor,Variable,Ceramic.0079Dieied*(Trimmer)L2151Pc14409Capacitor,Variable(PistonType,.0060‘TubularTrimmer)2151CT92Capactior,Vati*le,AkDieIectric.0000072(Trimmer)1151(%23183Capacitor,FixedorVariable,.0060VacuumDielectric*..10-2SupersedesSection10.1-10.20ofRevlslonFI.-I—1IMIL-t-iDBK-217FNOTICE210.1CAPACITORSTemperatureT(%)2030405060708090100Column.911.11.31.61.82.22.52.83.23.74.1Factor-XT1Column2.791.31.92.94.26.08.411152127CapacitanceFactorCapacitance,c(~F).000001.00001.0001.001.01.05.1.513818402001‘=-~,Column1.29.35.44.54.66.76.81.941.01.11.21.31.41.61.92.12.32.52.7Column2.04.07.12.20.35.50.59.851.01.31.61.92.33.44.96.38.311131101201301401504.65.135445.6-Ea1561000))3000100003000060000%T=‘W(8.617x10-5(T+273Column1:Ea=.15Column2:Ea=.35T=CapacitorAtiientTemperature120000Column1:~Column2:~=C“og=C-23NOTE:1.fiTvaluesshownshouldonly~useddevice.2,uptothetemperatureratingoftheFordeviceswithratingshigherthan150”C,usetheequationtodetermineXT(fora~li~tionsahve150”C).Supersedes—-IIISection1-1..10.1-10.20IofRevisionrFIs-110-3..t3-MIL-I+DBK-217FNOTICE210.1CAPACITORS—VoltageStressFac!or-x,VoltageStress0.10,20.30.4Column1Column2Column31.01.01.11.31.62.02.63.44.45.6*Column41.01.0Column51,01.11.21,52.02.73.75.16.8F9.041.01.01.01.11.42.03.25.28.61.01.01.01.01.01.01.02.01513099059000.50.60.70.80.9141.22.05.7195916614~5+1Column1:7CV=.6()~Column4:Zv=Column2:xv=s10+13+1()~.6g().517+1()Column5:%V=3+1Column3:xv=()&,6s=OperatingVoltageRatedVoltageNote:OperatingvoltageisthesumofappliedDCvoltageandpeakACvoltage.SeriesResistanceFactor(TantalumCSRStyleCapacitorSOnly)-XSRCircuitResistance,CR(ohms/vott)>0.8>0.6to0.8>0.4to0.6>0.2to0.4—1%R.661.01,32.02.73.3<>0.1to0.2CR.Eff.Res.BetweenVoltageCap.andPwr,Su~~AppliedtoCapacitor10-4SupersedesSection10.1-10.20ofRevisionFMIL-HDBK-217FNOTICE210.1CAPACITORSQualityFactor-XOQualityEstablishedocS,BRPMLNon-EstablishedReliabilityCapacitors(MostTwo-LetterReliabilityStyles—7rQEnvironmentEnvironmentGB.001.01.03.1.31.01.5GFGMNsNuAC‘IF‘Uc‘UF‘RWFactor-KEfiE1.010207.0151215253040Styles)3.0SFMF2050570.50CommercialLevelorUnknownScreening10.MLCLNOTE:~t~tis~reltiil~~l~amfa~rerategraded(D,C,S,etc.)basedonlifetestingdefinedintheapplicablemilitarydevicespecification.Thiscategoryusuallyappliesonlytothree-letterstyleswithan“R”suffix.SupersedesSection10.1-10.20ofRevisionF10-5MIL-HDBK-217FNOTICE210.2CAPACITORS,EXAMPLEExampleGiven:A400VDCratedcapacitortypeCQ09A1KE153K3isbeingusedinafixedgroundenvironment,50”Ccomponentambienttemperature,and200VDCappliedwith50Vrms@60Hz.Thecapacitorisbeingprocuredinfullaccordancewiththeapplicablespecification.Theletters“CQWinthetypedesignationindicatethatthespecificationisMlL-C-l9978andthatitisaNon-EstablishedReliabilityqualitylevel.The“E”inthedesignationcorrespondstoa400voltDCrating.The“’I53”inthedesignationexpressesthecapacitanceinpicofarads.Thefirsttwodigitsaresignificantandthethirdisthenumberofzerostofollow.Therefore,thiscapacitorhasacapacitanceof15,000picofarads.(NOTE:Pioo=10-12,~=10-6)BasedorIthegiveninformationthefollowingmodeifactorsarecfetetminedfromthetablesshowninSection10.1.lb=.00051XT=1.6UseTableEquation(Note15,000pF=.015PF)7CV=2.9s=DCVoltsApplied+fi(ACVoltsApplied~DCRatedVoltages=200+dz(50~..m400$=~~~c~v%RXQ‘E=(.00051)(I.6)(.69)(2.9)(1)(3.O)(1O)$=.049Failures/l06Hours10-6SupersedesSection10.1-10.20ofRevisionF—MIL-HDBK-217FNOTICE211.1sTYLETFINDUCTIVEDEVICES,TRANSFORMERSDESCRIPTIONAudio,PowerandHighPowerPulseSPECIFICATIONMIL-T-27MIL-T-21038MIL-T-55631TPLowPowerPulseIntermediateFrequewy(IF),RFandDiscriminator)LP=~~xTxQz~Fai~Ures/l06HoursBaseFailureRate-~TransformerFlyback(C20VOM)Audio(15-2oKHz)LowPowerPulse(PeakPwr.c300W,Avg.Pwr.<5W)Lb1QualityFactor-~rbQualitYlcQ+(F/106hrs.).0054.014.022iMIL-SPEcLowerI131EnvironmentFader-ZEfiE1.06.0HighPower,HighPowerPulse(PeakPowerz300W,Avg.Pwr.25W)Hz)RF(1OK-IOM.I.049Environment.GBGF.13,IGMNsNuAlc125.0166.08.07.09.024*AI.TempemtumFactor-XTI,30405060708090100110120130140150160170180I!’:1.Z1.41.61.81.92.22,42.62.8-.3.1.-II‘IF%cI1‘UF““t-IvvAm,I.IMLcLI.3U13346103.33.53.84.I4.34.6-.11,1)){(“C),SeeSection190XT=exp~W-29Et8.617xI0[(I_THS=HotSpotTemperature11.3.ThispredictionmodelassumesthattheinsulationratedtemperatureEnotexceededformorethan50,0ofthetime.IJ11-1Supersedespage11-1ofRevisionFMIL-HDBK-217FNOTICE211.2SPECIFICATIONMIL-C-15305MIL-C-83446MIL-C-3901OSTYLEINDUCTIVEDEVICES,COILSDESCRIPTIONFixedandVariable,RFFixedandVariable,RF,ChipMolded,RF,Est.Rel.+,BaseFailureRate-~InductorType~F/lo6Ms.QualityFactor-~—QualitysIIQFixedInductororChokeVariableInductor.000030.000050.03.10RP.301.0TemperatureFactor-XTXTMTH@)2030405060708090100110120130140150160170180190XT=e)(pMIL-SPECLower1.03.0.931.11.21.41,61.8EnvironmentFactor-XEEnvironmentGBGFGMNsNu*IC~E1.06.0125.0166.01.92.22.42.62.83.13.33.53.8‘IF*UC*UF*RWsFMFML))8.07.09.024.5013346104.14.34.6-.1110-5(8.617x(11TH~+273-=‘HS=HotSpotTemperature(“C),SeeSection11.3CLSupersedespage11-3ofRevisionF11-3MIL-HDBK-217FNOTICE211.3INDUCTIVEDEVICES,DETERMINATIONOFHOTSPOTTEMPERATUREl-lotSpottemperaturecanbeestimatedasfollows:THS=TA+1.1(Amwhere:-$+s=HotSpotTemperature(“C)TA=InductiveDeviceAmbientOperatingTemperature(“C)AT=AverageTemperatureRiseAboveAmbient(“C)ATcaneitherbedeterminedbytheappropriate“Te~eratureRise”TestMethodparagraphinthedevicebasespecification(e.g.,paragraph4.8.12forMIL-T-27E),orbyapproximationusingoneoftheproceduresdescribedbelow.Forspaceenvironmentsadedicatedthermalanatysisshouldbeperformed.AT&pmximation(Non-spaoeEnvironments)Information.—-KnownATArmoximationI1.MIL-C-3901OSlashSheetNumberMIL-C-39010/lC-3C,5C,7C,9A,lOA,13,14AT=15°CMIL-C-39010/4C,6C,8A,11,12AT=35°C2.PowerLossAT=125WL/ACaseRadiatingSurfaceArea3.PowerLossTransformerWeightAT=11.5wL/(wt.)”6766I4.InputPowerTransformerWeightAT=2.1W~(Wta)06766(Assumes800/0Efficiency)W’=PowerLoss(W)A=RadiatingSurfaceAreaofCase(in2).SeebelowforMIL-T-27CaseAreasWt.=TransformerWeight(lbS.)w,=InputPower(W)NOTE:Methodsarelistedinprefemdorder(i.e.,mosttoleastaccurate).MIL~-3901Oaremicro-miniaturedeviceswithsurfaceareaslessthan1in2.Equations2-4areapplicabletodeviceswithsurfaceareasfrom3in2to150in2.Donotincludethemountingsurfacewhendeterminingradiatingswfacearea.MIL-T-27CaseRadiatinqAreas(ExcludesMountingSurface)CaseCaseArea(in2)CaseArea@2)AFIArea(in2)4GB33LB82AG7GA43LA98Al-111H542MB98AJ18HA53MA115EB21JB58NB117EA23JA71NA139FB25KB72OA146FA31KA8417-4Supersedespages11-4and11-5ofRev[sionF#,.–MIL-HDBK-217FNOTICE212.1ROTATINGDEVICES,MOTORSThefollowingfailure-ratemodelappliestomotorswithpowerratingsbelowonehorsepower.Thismodelisapplicabletopcdyphase,capacitorstartandrunandshadedpolemotors.h’sapplicationmaybeextendedtoothertypesoffractionalhorsepowermotorsutilizingrollingelementgreasepackedbearings.Themodelisdictatedbytwofailuremodes,bearingfailuresandwindingfailures.ApplicationofthemodeltoD.C.brushmotorsassumesthatbrushesareinspectedandreplacedandarenotafailuremode.Typicalapplicationsincludefansandblowersaswellasvariousothermotorapplications.Themode!isbasedonReferences4and37,whichcontainamorecomprehensivetreatmentofmotorlifeThereferencesshouldbereviewedwhenbearingloadsexceed10percentofratedload,speedspredictionmethods.rpmormotorloadsincludemotorspeedslipofgreaterthan25percent.‘exceed24,000Theinstantaneousfailurerates,orhazardrates,experiencedbymotorsarenotconstantbutincreasewithtime.TheovertimewridT.Thistimeperiodisfailureratemodelinthissectionisanaveragefailurerateforthemotorop-tingeitherthesystemdesignlifecycle(LC)or’thetimeperiodthemotormustlastbetweencompleterefurbishment(orreplacement).Themodelassumesthatmotorsarereplaceduponfaifureandthataneffectiveconstan!failurerateisachievedafteragiventimeduetothefactthattheeffective~imezero-ofreplacedmotorsbecomesrandomaftera,canbetreatedasaconstantfailurerateandsignificantportionofthepopulationisreplaced.TheaveragefaikuOrate,$addedtootherpartfailureratesfromthisHandbook.l.p=—[x,A(xB+BaW—Lz1x106Failures/l08I-ioursBearing&WindingCharacteristicLife-c%Randaw.-‘A(“c)o~(Hr.)~(Hr.)TA(=)708090100110120130140aB(Hr.)2200014000910061004200290021001500~(Hr.)E30405060360013000390007800055000350006.49+063.2e+061.W+068.9e+055.oe+052.9e+051.8e+051.1Q+057.09+044*6e+043.le+042.19+041.5e+041.09+047.5e+032.534-aB-[2357[,0TA+273%/”aBw“TANOTE:==10(TA2~:73)+1450010(20-~)+3001-1-1.83]WeibullCharacteristicLifefortheMotorBearingWeibullCharacteristicLifefortheMotorWindingsAmbientTemperature(“C)whentemperatureisnot@nstant.Seepage12-3formethodtocakulateaBand~Supersedes.—____————________page12-1ofRevisionF—-.____——12-1—..-__MIL-HDBK-217FNOTICE212.1ROTATINGDEVICES,MOTORSAandBDeterminatbnL—--—andLcDetermination..11B1.1.291.75.4MotorTypeElectrical(General)A1.9.482.411Lcw&aB0-.10awk,orQSensorServoStepper.13.15.23.31.41.51.61.68.761.0.11-.20.21-.30ExampleCalculathnAgeneralpurposeelecltialmotorisoperati~at50”Cinasystemwitha10yeardesgnlife(876Whours)expedancy,.31-.40.41-.50.51-.60.61-.70,71-.8055000Hrs.2,9e+5Hrs.87600~fS.=5500087600I+rs.I-trs.1.e.81-.90>1.02.9e+5Hrs.=.3LCisthesystemdesignMecycle(inhours),orthemotorpreventivernaintenameintewal,ifmotomwillbeperiodidlyreplacedor1.0(L&.aB1.6).3)refutished.Determinekland~separatelyLCam—LCratios.basedontherespedive—UBaw.23(1.91.1f.rg=aw%=[*+.23(1.V(2.9e+5)16x‘0‘P=10.3Failures/l06Hours~9.9ILLSupersedespage12-2ofRevisionFIMIL-1-iDBK-217FNOTICE212.1‘CalculationforCycledTemperatureROTATINGDEVICES,MOTORSThefollowingequationcanbeusedtocalculateaweightedcharacteristiclifeforbothbearingsandwindings(e.g.,forbearingssubstituteaBforalla’sinequation).h1+h2+h3+------hma=hl—+alhz—+a2h3—+-------—a3h~amwhere:ah,h*h3hmaleither~orawT1T,toT3Timeatle~eratureTimetoCycleFromTemperatureTimeatTemperaturemmeatTemperatureBearing(orWinding)Bearing(orWhaling)T,+T3T~=2$T4=2T3TmLiieatT1LifeatT2‘2T3+T,4T3T2TI.-f/h4hlII1hzIh3HoursThermal(h)CycleSupersedespage12-3ofNotice112-3MIL-HDBK-217FNOTICE212.2ROTATINGDEVICES,SYNCHROSANDRESOLVERSDESCRIPTIONRotatingSynchrosandResolverskp=&S~NXEFailures/l06HoursNOTE:Synchrosandresolversarepredomiwtelyusedinservicerequitingonlyslowandinfrequentmotion.Mechan~alwearotiproblemsareinfrequetisothattheelectricalfailuremodedominates,andnomechankalmodefailurerateisrequiredinthemodelabove.BaseFailureRate-~NumberofBrushesFactor-~NumberofBrushes%N=~.008385.032521.43035.0080.041.05232.540.00959545.010100.069.09443.250.01110555.013110.1360.014115.1965.016120.2970.019125.45EnvironmentFactor-ZE75.022130.74r80I.027~,1.3EnvironmentfiEGB1.0%..oo535expf-)8”’GF2.0%12TF.FrameTernpwatum(z)IN~7.0IfFrameTemperatureisUnknownAssumeN“18TF=40“C+AtiietiTempentureAC4.0‘IF6.0*UC16SizeFactor-x~‘UF25w261‘RWDEVICESize8orSize10-16SizeTYPEsmallerLarger18orSF.50Synchro21MF141.5ML36Resolver32.251.5CL680I\\12-4Supersedespage12-4ofNotice1//”-.>.\\NaaA\\—MIL-HDBK-217FNOTICE212.3ROTATINGDEVICES,ELAPSEDTIMEMETERSDESCRIPTIONElapsedTimeMeterskp=&p~Failures/106HoursBaseFailureRate-~TypeA.C.InvefierDrivenCommutatorD.C.ILb203080EnvironmentFactor-xcEnvironmentGBGF%NsNuL~E1.02.0127.0185.08.0162526.501438N/ATemperatureStressFactor-XTOperatingT(°C)/RatedT(~)oto.5.6.81.0[‘XT.5.6.81.0*IC‘IF‘Uc‘UF‘RWSFMFMLCLSupersedespage12-5ofRevisionF12-5MIL-HDBK-217FNOTICE213.1RELAYS,MECHANICALSPECIFICATIONM\\L-R-5757MIL-R-6106MIL-R-13718MIL-R-196MIL-R-19523MIL-R-390~6MIL-R-83516MIL-R-83520ML-R-83536MIL-R-83725MIL-R-83726(ExceptClassC,SoltiStateType)DESCRIPTIONMechanicalRelay)bP=&Lncxc&xQn1{EFailures/la.ObHoursLoadStressFactor-XL~--IT.-AT.(%)n’“BaseFailureRate-~Rat#TempenttI~a1.I125”$I0s%’‘:&9.0067.0075.00.0094.010.012.013.014.016:6.005=.0066.0073.0081.00.0098.011.012.013.014.015.017.018.019iii.022.024.026.027.029.031125303540455055606570l=--.U3.10.20.30.40.50.60.70.80.90~1.y--‘R*06.-1I11.021.061.151.281.481.762.152.723.554.77S2-j1.281.762.724.779.4921.42,729.4954.6I7580659095100105.017.019.0213.~.exp()()S2~110115120125-.0059exp(-.0059exp-.198.617X10-5!1)Forsingledev”-swtkhswitchtwodifferentloadtyps,evaluateq-foreachpossiblestr-sbadtyPScombinat’mnandusetheworsecasO(largestXL).‘“%[~-zm1)11—.—1298q,,ICydiMIFader-~ycc@eRate(@cbSperHour)21.0<1.0Cycle?%Yc2“%(-.178.617X10-5[T+273L/r(MIL-SPEC)100.1‘CYC~A“~bantTempmtureVC)RateContadFomFactor-nc*1,(C@esperHour)>1OOO10-1000<10NOTE-AI100CyclesperHour101.0(AppliestoActiveConcludingConta~s)‘cmntactForms?S1DPSTsPOT3PST4PSTDPDT3PDT4PDT6PDT1.00.cnI.au1.752.002.503,004255508001‘ValuesofnCYCforcyclingratesbeyondthebasicdesignhmttationsoftherelayarenotvalldDeslgspecdicatlonsshouldbeconsultedpriortoevaluationof‘CYCnIb-H13-1page13-1SupersedesnnllofRevisionWIFITHSISIUI.rlxuu.uulllwalLlwIl10IISZUIOUWUJ,-U.l1w-l!W1-.-y-----------.---MIL-HDBK-217FNOTICE213.1RELAYS,MECHANICAL—QualityFactor-n,ApplicationandConstf’uctionFactor-fiFConstruction1Quality7tQContactApplicationRatingTypeTypeCircuitArmature(Long)R.10~D~lrrentDryReedP.303WmvMercuryWettedIdma)MagneticLatchingx.45Balanc6dArmatureSolenoidu.60wGeneralArmature(LoW)M1.0Pum09eBalancedArmaturebSolenoidL1.5SensitiveArmature(Longand(0-lCN)mw)short)MIL-SPEC,Non-Est.Rel.1.5MercuryWettedMagneticLatching@mmercial2.9MeterMovementBalancdArmaturePolarizedArmature(ShOti)EnvironmentFactor-xcI5261001010T100\\L1EnvironmentfiEI25GB1.0GF2.015M%ElectronicNs8.0Ilrne~Dew,*-Thermal1Nu27.atching,wReedI10MagneticMikwyWetted5AC7.0Balan@armature59.05-20AmpHighVoltageVacuum(Glass)20‘IFVacuum(Ceramk)511~Armature%cPowershort)(Longand312MercuryWetted‘UFMagneticLatching:‘RW46Mechan’~1Latching3Bala-Armature2SF.50Solenoid2MF2525-600ContractorsArmature(Short)7(HighMechanlcdLatching12ML‘66ICurrent)Baian@dArmature10Solenoid5c,N/A13-2Supersedespage13-2ofRevisionF—————fvllL-HDBK-21NOTICE27F13.2SPECIFICATIONMIL-R-28750MIL-R-83726RELAYS,SOLiDSTATEANDTIMEDELAYDESCRIPTIONRelay,SolidStateRelay,TimeDelay,HybridandSolidStateThemostaccuratemethodforpredictingthefailurerateofsolidstate(andsolidstatetimedelay)relaysistosumthefailureratesfortheindividualcomponentswhichmakeuptherelay.TheindvidualcomponentfailureratescaneitherbecalculatedfromthemodelsprovidedinthemainbodyofthisHandbook(PartsStressMethod)orfromthePaflsCountMethodshowninAppendixA,dependinguponthedepthofknowledgetheanalysthasaboutthecomponentsbeingused.Ifinsufficientinformationisavailable,thefollowingdefaultmodelcanbeused:~=~z@EFailures/106lioursBaseFailureRate-~1RelayTypeSolidStateSolidStateTimeDelayHybridEnvironmentFactor-XELb1—EnvironmentGBGFfiE1.03.0126.0171219213223.401233590.029.029.029GMNsN“AlcQualityFactor-z~I—‘IF7CQ1QualityMIL-SPECCommemialI%c‘UF‘RWSFMFMLcLI1.01.9Supwsedwpage13-3ofRwIsmF13-3MIL-HDBK-217FNOTICE214.~SWITCHESBaseFailureRate-~1Spec.~(F/106tirs.)MIL-S-DescriptionCentrifugalDual-In-linePackageLimitN/A8350488053.4.000124.32.31.72,8Stresss0.050.10.20.30.40.50.60.70.80.91.0LoadStressFactor-XLLoadTypeInductiveResistive1.021.001.061.021,061.151.281.481.762.152.723.554.771.281.762,724.779.4921.4Lamp1.061.282.729,4954.6LiquidLevelMicrowave(waveguide)pressureIpushbuttonIIN/AIIcedlockeriotafySensitiveThermalThurnbwhedToggleI4Supersedes32939512118805I228852431755433395022885378613623152911574322604227104588582359880513484226141228524286227103950559488058834941913735.8155183731.10b.0010.023.11Is=OperatingLoadCurrentRatedResistiveLoadCurrent=IXLexp(S/.8)2forResistiveLoadforInductiveLoadfortirnpLoadfiLfiL==exp(s94)2exp(S/.2)2NOTE:Whentheswitchisratedbyindutiiveload,thenuseresistivenL.Conta@ConfigurationFactor*-Zc#ofContactstNCContactForm1SPST2DPST2sPOT33PST44PST4DPDT63PDT84PDT126PDT.49.031.18.10xc1.01.31.31.41.61.61.82.02.3II4LAppliestotoggleandpushbuttonswitchesonly,allothersusefic=~.74-1page14-1through14-4ofRevisionFMIL-HDBK-217FNOTICE214.1SWITCHESEnvironment~QIQualityFactor-Kn.Factor-n~~EIIQualityMIL-SPECLowerIEnvironmentI1GBJGFGMNSNu*C‘IF‘Uc‘UF‘RWSFMFMLCL1.03.0188.0291018132246.5025671200I214-2Supersedespage14-1through14-4ofRevisionFMIL-HDBK-217FNOTICE214.2SWITCHES,CIRCUITBREAKERSSPECIFICATIONMIL-C-13516MIL-C-55629MIL-C-83383MIL-C-39019W-C-375DESCRIPTIONCircuitBreakers,ManualandAutomaticCircuitBreakers,Magnetic,Unsealed,Trip-FreeCircuitBreakers,RemoteControl,Thermal,Trip-FreeCircuitBreakers,Magnetic,LowPower,Sealed,Trip-FreeServiceCircuitBreakers,MoldedCase,BranchCircuitandSewicekp=&cXuZQnEBaseFailureRate-kDescriptionMagneticThermalThermal-MagneticFailures/l06HoursoualitvFactor-~n%3.34.34.34QualityMIL-SPECLower7CQ1.08.4EnvironmentFactor-xcIEConfigurationFactor-mConfigurationSPSTDPST3PST4PST1.02.03.04.0nvironmentGBGF1.02.0158.0277.09.0111246.502566NtAGMNsNuAC‘IF%cUseFactor-zUseNotUsedasaPowerOn/OffSwitch‘AisoUsedasaPowerOn/OffSwitch1.02.5,‘UF‘RWSFMFMLCLSupersedespage14-5ofRevisionF14-3MIL-HDBK-217FNOTICE215.1CONNECTORS,GENERALLP=kbnTnKnQnEFailures/lo6‘oursAPPLICATIONNOTE:ThefailureratemodelisforamatedpairofconneCtom.Itissometimesdesirabletoassignhalfoftheoverallmatedpairconnedor(i.e.,singlecorm-or)failureratetotheImereplaceableunitandhalftothechassis(orbackplane).Anexampleofwhenthiswouldbebeneficialisforinputtomaintainabilitypredictionaccounti~toallowafailureprocedurecouldberateweightedsignif”tintifrepairtimetobeestimatedforboththeLRUandchassis.Thisrepairtimesforthetwohalvesoftheconnectoraresubstantiallydifferent.Forasingleconnectordivide~bytWO.BaseFailureRate-~TemperatureFactor-XTI~ification-$)(’vDescriptionMIL-C-20.91;ircular/Cylititil115282.0010301.1i50027599184029600401.3)99983723501.51511601.8702.0ardEdge(PCB)*21097.040802.355302902.7exagonal24055.151003.0240561103.4ackandPanel24308.0211203.7287311304.128748835151404.61505.0Rectangular21617.0465.524308160287481706.0288041806.5816597.0835131908352?2007.5837332108.1850282208.63FCoaxialS60715370.000412309.236X3255162409.8S65026637I36553901225010.5523583517r-.14XTsexp‘-1.—1298Telephone55074.007518.617X10-5(To+273)1Power22992.0070To=ConnectorAmbient+ATTrlaxial49142.0036AT=ConnectorInsertTemperatureRise(seeTable)‘Pr~ntedCircuitBoardConnector15-1Supersedespage15-1through15-5ofRevisionF.———a—__________...—...——..—.—MIL-HDBK-217FNOTICE2~erContact23456710152025303540DefaultInsertTemperatureRiselAT‘C)———,DeterminationContactGaugeAmperesLMating/UnmatingFactor-nK~K30102237567922481319273657702025813182330374596161245810131619417010612011234567152639547292Mating/UnmatingCycles*(per1000hours)oto.05>.05to.5>.5t05>5t0501.01.52.03.0>50qOnecycleincludesbothconnectanddisconnect.QualityFactor-XQILowerQualityMIL-SPECI1I2ATATATATATATATATAT=========3.256(i)’“852.856(i)’“85852.286(i)’q1.345(i)l“850.9(i)’q850.0(i)’“850.429(i)’’850.274(i)’’850.100(i)’“85InsertTemperature32Gauge30Gauge28Gauge24Gauge22Gauge20Gauge18Gauge16GaugeContactsContactsContactsContactsContactsContactsContactsContactsEnvironmentFactor-XEEnvironmentGBGFGM~E1.01.012GaugeContactsRise48.05.0133.05.08.01219.5010AT=i=NsNuAlc‘IFAmperesperContactRFCoaxialConnectorsAT=5°CAT=50°CRFCoaxialConnectors(HighPowerApplications)‘Uc‘UF‘RWSFMFML27490c,15-2Supersedespage15-2through15-5ofRevisionFMIL-HDBK-217FNOTICE215.2CONNECTORS,SOCKETSLp=++CP7CQ7CEFailures/l06HoursBaseFailureRate-~ActivePinsFactor-npSpec.NumberofNumberof“DescriptionhttlL-SLbActiveActiveContactsContacts7tpDual-In-LinePackage83734.00011.0556.9Single-In-LinePackage83734.00021.5607.431.7657.9ChipCamier38533.0004708.45H758.9PinGridArrayNIA.00062.1809.472.3859.9Relay12883.03782.49010Transistor12883.005192.59511102.610012ElectronTube,CRT12883.011112.710512122.811013132.911513QualityFactor-~143.012014153.112514Quality~Q163.213015173.313.516MIL-SPEC..3183.414016193.517Lower1.0203.6;$18254.115518304.516019EnvironmentFactor-~E355.016520EnvironmentfiE405.517020455.917521GB1.0506.418022GF3.0%14Ns6.0Nu18N=NumberofActivePinsAC8.0Anactivecontactistheconductiveelement‘IF12whichmateswithanotherelementforthepurposeoftransferringelectricalenergy.*UC11*UF13*RW25SF.50MF14ML36c,650Supersedespage15-6ofRevisionF15-3IIIl.-I----1IMIL-HDBK-217FNOTICE216.1Ap=kbINTERCONNECTIONNptc+N2(~c+ASSEMBLIESWITHPLATEDHoursTHROUGHHOLES13)[17tQnEFaillJre@APPLICATIONNOTE:Thismodelappliestoboardconfigurationswithleadeddevicesmountedintotheplatedthroughholesandassumesfailuresarepredominatelydefectrelated.Forbeadsusingsurfacemounttechnology,useSection~6.2”Foramixofleadeddevicesmountedintoplatedthroughholesandsurfacemountdevices,usethismodelfortheleadeddevicesanduseSection16.2forthesurfacemountcontribution.AdiscretewiringassemblywithelectrolessdepositplatedthroughholesisbasidlyapatternofinsulatedwiresTheprimarycauseoffailureforbothprintedwiringanddiscretelaiddownonanadhesivecoatedsubstrate.wiringassembliesisassociatedwithplatedthrough-hole(PTH)problems(e.g.,barrelcrackng).QualityFactor-~BaseFailureRate-~TechnologyPrintedWiringAssemb!yFtintedCircuitBoardswithPTHskb.000017QualityMIL-SPECorComparableInstituteforInterconnecting,andPackagingElectronicCircuits(lPC)Standads(IPCLevel3)LowerltQ1DiscreteWiringwithElectrolessADepositedPTH(<2LevelsofCircuit@Nu~r.000112ofPIWsFactor-N1andN2QuantityFactorIN,IAutomatedTechniques:QuantityofWaveInfrared(IR)orVaporPhaseSolderedFunctionalPTlisQuantityofHandSolderedPTHsComplex”~Factor-~IEnvimnmtiEnvironmentGBFactor-xcb~E1.01N2ILIGFGMI2.07.05.013NumberofCircuitPlanes,PS234567101112131415161718xc1.0&sNu‘1.31.61.82.02.22.42.62.82.93.13.33.43.63.73.94.01I%c‘IF%c‘UF5.0I8.0162819.501027500%wSFMFML.cLDiscreteWwngw/PTHxc=.65P63Ifj-1Supersedes-.--1-Ipage16-1ofRevisionF,Jr-------------.MIL-I+DBK-217FNOTICE216.2INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGYAPPLICATIONNOTE:TheSMTModelwasctevelopecftoassessthelifeintegfiiyofleadlessandleadeddevices.Itprovidesarelativemeasureofcircuitcardwearoutduetothermalcyclingfatguefailureofthe“weakestlink-SMTdevice.AnanalysisshoutibeperiorrnedonallcircuitboardSMTcomponents.Thecomponentwiththelargestfailureratevalue(weakestlink)isassessedastheoverallboardfailurerateduetoSMT.Themodelassumestheboardiscompletelyreneweduponfailureoftheweakestlinkandtheresultsdonotconsidersolderorleadmarwfacturi~defects.ThismodelisbasedonthetechniquesdevelopedinReference37.ASMT=AveragefailurerateovertheexpectedequipmentlifecycleduetosurfacemountdeviceThisfailureratewearout.contr’butbntothesystemisfortheSurfaceMountDeviceoneachboardexhibitingthehighestabsolutevalueofthestrainrange:where:CR=Temperaturecyclingrateincyclespercalendarhour.Baseonathermalanalysisofthecircuitboard.Usetabledefaultvaluesifotherestimatesdonotexist.AveragenumberofthermalcyciestofailureNf=I(%AT-ucc(dT+TRIsE))ECF)LSMT=~ECF=lx10-6Nf=3.5&,(1(asAT-Cfcc(AT+TRIsE))Ix10+)-’qn,c)EffectivecumulativenumberoftheWeibullfailuresoverctwacte~iclife.where:d=Ffi*iVGI_k..””...-~llmldat~~Lcral~~r~~-FCFuw---------ECF.13.15.23.31.41.51.61.68.761.0h=Distancefromcenterofdevicetothefurthestsolderjointinmiis(thousandthsofaninch)SolderjointheightinmiisforIeadiessdevices.Defaulttoh=8foralileadedconfigurations.Circuitboardsubstratethermaicoefficientofexpansion(TCE)-MT0-.1.11-.20.21-.30.31-.40.41-.50.51-.60,61-.70.71-.80.81-.90>.9LC=w=ATw%=TRISE==UseenvironmenttemperatureextremedifferencematerialthermalPackagecoefficientofexpansion(TCE)Temperatureriseduetopowerdissipation(Pal)==eJcpDesigniifecycleoftheequipmentinwhichthecircuitboardisoperatingPd8JCUSMT=TheWeibullcharacteristiclife.USMTisafunctionofdeviceandsubstratematerial,themanu-facturingmethods,andtheapplicationenvironmentused.~Lc=P=Thermalresistance‘/WattPowerDissipation(Watts)Leadconfigurationfactor16-2NewPage—MIL-HDBK-217FNOTIGE216.2INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGYas-DefaultTCESubstrateValuesCR-CyclingRateDefau~ValuesSubstrateMaterialasEquipme~TYPeNumberOfCycles/Hour1.0FR4Laminate18l~omotive.08FR-4Multilayer60ard20:onsumer(television,radio,11recorder)FR-4MultilayerBoardw/Coppercomputer.17[CladInvarI.00427Telecorn~~”~t’~ns?ramicMuttilayerBead.255CommercialAlrcrati~pperCladInvar.021IKMol@@mmdINustrialCopperCladMilfiarYGwtiAppl”=tbm.03Cafbon-Fibr/EpOWCorw@e1Miliia~Aircraft(Caf90).12KevlarFiber3MiliiafyAhcnti(FigMer).5@artzFiber1GlassFiber5XLC-LeadConfigurationFactorEpoxy/GlassLaminate15LeadConfiguratbn%CPolyamtie/GlassLaminate13LeadlesS1Polyam”~/KevlarLaminate6JorSLead1508GullWIWL5,000.Po&amtie/Wa~LamiMte@oxy/KevkrLaminate7c-TCEPackageValuesAlumina(Ceramk)7@mxyArarnkfFiber7,6Plastic76PolyamMAramtiFitwr9,CeramicEpoxy-Quafiz20AT-UseEnvimnmetiDefaultFiberglassTefbnLaminates7vTe~eratureDifferencePorcelainkedCopperCladInvarEnvironmentAT171FiberglassCeramkFibwGB7E)cAMPLE:AlargeplasticencapsulatedGF21Ieadlesschipcanierismountedonaepoxy-GM26glasshJs26~ns”~erationsprintedWiringare:asquareassetily.pa*ageThe$esignis1480roilsonaside,solderheightis5roils,powerNu61dissipationis.5watts,thermalresistanceis20°C/wati,thedesignlifeis20yearsand%c31envkOnmtiismilitarygroutiapplication.TheAIF~31failureratecfevebpedistheimpadofSMTforasinglecircuitboardandaccountsforallSMT%c57devicesonthisboard.Thisfailurerateisadded‘UF57tothesumofallofthecomponentfailureratesonthecircutiboard.%lw31Sc7M’FN/AMLNIANfCLhJIA(xsMT=c–fi16-3NewPageMIL-HDBK-217FNOTICE216.2INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY~f=3“5(.RdI(asAT-ucc(A~+TRlsE))I“0-6)-226@Lc)-Ford:Forh:Foras:d=~(1480)=740roilshs5roilsas=15(Table-EPOXYGlass)AT_21(Table-GF)~.7(Table-PlastiC)ForAT:ForWC:ForTRISE:ForXLC:ForCR:NfTRISE=eJCp=20(.5)=10°CZLC=1(Table-Leadless)CR=.03cycle~our(Table-Milita~Gmun@-7W+1O))1)x104“2”26(1)==3“5(1740(.65)(5)(W2VNf18,3themlcyclestofailureWMT.629,767hOu~18,3cycles.03cyiedbur=1-caSMT“W=*.28ECF~SMT==.23failures(TaMe-EffediveCumulativeFailures)ECF~T.23faiiures.0000004failure~~ur=629,767kNJrS=XSMT=,.4failures/106hoursNewPage16-4MIL-HDBK-217FNOTICE217.1CONNECTIONSusedonallassembliesUsetheIntermnnedionAssemblyAPPLICATIONNOTE:Thefailureratemodelinthissectionappliestoconnedionsexceptthoseusingplatedthroughholesorsurfacemounttechnology.connectionstoacircuitboardusingeitherplatedthroughholetechnologyModelinSectbn16toaccountforThefailurerateofthestrudurewhichsupportstheconnedionsandparts,e.g.,areSoldeflesswrapconnectionsorsurfacemounttechnology.non-plated-throughholeboardsandterminalstraps,isconsideredtobezero.chara~erizedbySOIMwirewrappedundertenshnaroundapost,whereashatisoldetingwithwrappingdoesThefollowingrrmdelisforasingleconnedion.notdependonatensioninducedconnedion.L=LX=UbPFailures/l06HoursEnvimnmntFactor-XcBaseFaihmRate-~ConnedionType~(F/106hm).0013.000070.00026.000015.0000068.00012.000069.17.062&1IEnvironmentGBGFGM...NsuIHandSolder,w/oWrappingHandSolder,w/WrappingcrimpWeldSoldeffessWrapClipTermin~bnReflowSolderSpfingContadTerminalBlock1AI2.07.04.04.06.06.08.016~E.-1.UAC‘IFAN‘UF‘RWSFI.509.024420MFMLCL17-1Supersedespage17-1ofRevisionFMIL-I-IDBK-217FAPPENDIXA:PARTSCOUNTRELIABILITYPREDICTIONPartsCountReliabllltyPredlctlon-ThispredictionmethodisapplicableduringbidproposalandearlydesignphaseswheninsufficientinformationisavailabletousethepartstressanalysismodelsshowninthemainbodyofthisHandbook.Theinformationneededtoapplythemethodis(1)genericparttypes(includingcomplexityformicrocircuits)andquantities,(2)partqualitylevels,and(3)equipmentenvironment.Theequipmentfailurerateisobtainedbylookingupagenericfailurerateinoneofthefollowingtables,multiplyingitbyaqualityfactor,andthensummingitwithfailureratesobtainedforothercomponentsintheequipment.Thegeneralmathematicalexpressionforequipmentfailureratewiththismethodis:i=n‘EQUIP=i=lZ‘i@g@iEquation1foragivenequipmentenvironmentwhere:~EQulP=Totalequipmentfailurerate(Failures/106Hours)‘97tQ==Genericfailurerateforthei‘hgenericpart(Failures/106Hours)Qualityfactorforthei‘hgenericpartQuantityofi‘hgenericpartNumberofdifferentgenericpartcategoriesintheequipmentNin==Equation1appliesiftheentireequipmentisbeingusedinoneenvironment.IftheequipmentcomprisesseveralunitsoperatingIndifferentenvironments(suchasavionicssystemswithunitsinairborneinhab~ed(Al)anduninhabited(AU)environments),tmnEquat~n1shou~~aPPliedtothepotiionsoftheequipmentineachenvironment.These“environment-equipment”failureratesshouldbeaddedtodeterminetotalequipmentfailurerate.EnvironmentalsymbolsaredefinedinSection3.ThequaMyfactorstobeusedwitheachparttypeareshownwiththeapplicable~tablesandarenotnecessarilythesamevaluesthatareusedinthePartStressAnalysis.M“crocircuits”haveanadditionalrnuttip~ingfactor,~L,whichaOCOuntsforthematudtyofthemanUfaCt@ngprocess.Fordevicesinproductiontwoyearsormore,nomodif’mtbnIsneeded.Forthoseinproductionlessthantwoyears,hshouldbemultipliedbytheappropriateXLfaotor(SeepageA-4).Itshouldbenotedthatnogenericfailureratesareshownforhybridmicrocimuits.Eachhybridisafairlyuniquedevice.Sincenoneofthesedeviceshavebeenstandardized,theircomplexitycannotbedeterminedfromtheirnameorfunction.Identicallyorsimilarfynamedhybridscanhaveawiderangeofcomplexitythatthwartscategorizationforpufposesofthispredictionmethod.Ifhybridsareanticipatedforadesign,theiruseandconstructionshouldbethoroughlyinvestigatedonanindividualbasiswithapplicationofthepredictionmodelinSection5.ratesshowninthisAppendixwerecalculatedbyassigningmodeldefaultvaluestothefailureratemodelsofSection5through23.ThespecificdefauttvaluesusedforthemodelparametersareshownwiththekgTablesformicrocircuits.DefauttparametersforallotherpartclassesaresummarizedinThefailurethetablesstaflingonPageA-12.Forpartswithcharacteristicswhichdiffersignificantlyfmmtheassumeddefaults,orpartsusedinlargequantities,theunderlyingmodelsinthemainbodyofthisHandbookcanbeused.A-1MIL-HDBK-217FNOTICE2APPENDIXA:PARTSCOUNTiNmmI1i1..mtwr--.-04II-wow..-mriOJre-mo.0--’=.I.Inc9.ZS81%inInLr*u’mIA?m*A-2—————.SupersedespageA-20fNotice1MIL-HDBK-217FNOTICE2APPENDIXA:PARTSCOUNTFF)mo-.-N.,..-mmo9-..04.,..mmmm.efwm....Cwlo.P.r)..Qo..QNN*W*SJ000.0000or-mm.-mm...to-Nsrl00000000o--m-Wolr-mm%000.Omoe.Pmm....Inulo)c*WOOOoocmmeam@@oOoocmcwea-NNC000—A-4MIL-HDBK-217FNOTICE2APPENDIXA:PARTSCOUNT1I.9::IIA-5SupersedespageA-5ofNotice1----MIL-HDBK-217FNOTICEPARTSCOUNTI>91APPENDIXA:I1—n4Iommz!0oN,,,r-U)00.rccinr)wm.4ta40
