Nitride semiconductor vertical cavity surface emit

专利名称：Nitride semiconductor vertical cavity surface

emitting laser

发明人：Scott W. Corzine,David P. Bour申请号：US11203699申请日：20050815公开号：US07352788B2公开日：20080401

专利附图：

摘要：In one aspect, a VCSEL includes a base region that has a vertical growth partlaterally adjacent a first optical reflector and a lateral growth part that includes nitridesemiconductor material vertically over at least a portion of the first optical reflector. An

active region has at least one nitride semiconductor quantum well vertically over at leasta portion of the lateral growth part of the base region and includes a first dopant of afirst electrical conductivity type. A contact region includes a nitride semiconductormaterial laterally adjacent the active region and a second dopant of a second electricalconductivity type opposite the first electrical conductivity type. A second opticalreflector is vertically over the active region and forms with the first optical reflector avertical optical cavity overlapping at least a portion of the at least one quantum well ofthe active region. A method of fabricating a VCSEL also is described.

申请人：Scott W. Corzine,David P. Bour

地址：Sunnyvale CA US,Cupertino CA US

国籍：US,US

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