专利内容由知识产权出版社提供
专利名称：INTEGRATED CIRCUITS
发明人：Hsien-Wei Chen,Ming-Fa Chen,Sung-Feng
Yeh,Ying-Ju Chen
申请号：US16859914申请日：20200427
公开号：US20210335735A1公开日：20211028
专利附图：
摘要：One of integrated circuits includes a substrate, a through via, a conductive padand at least one via. The through via is disposed in the substrate. The conductive pad isdisposed over and electrically connected to the through via, and the conductive pad
includes at least one dielectric pattern therein. The via is disposed between andelectrically connected to the through via and the conductive pad.
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
地址：Hsinchu TW
国籍：TW
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