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专利名称：Pellicle and method for producing pellicle发明人：Kubota, Yoshihiro,Akiyama, Shoji,Shindo,
Toshihiko
申请号：EP09006708.3申请日：20090519公开号：EP2124102A2公开日：20091125
专利附图：
摘要：A pellicle film (11) of a silicon single crystal film and a base substrate (12)supporting the pellicle film are formed of a single substrate using an SOI substrate. Thebase substrate (12) is provided with an opening whose ratio in area to an exposure region
when a pellicle is used on a photomask (an open area ratio) is 60% or more, and providedwith a reinforcing frame (12a) in a non-exposure region of the base substrate. Since thepellicle film (11) and the base substrate (12) supporting the pellicle film are formed ofthe single substrate (an integrated structure), and the base substrate is provided with thereinforcing frame, the effect of increased strength is obtained. Moreover, a principalplane of a silicon single crystal film (11) is a crystal plane inclined at 3 to 5° from anylattice plane belonging to {1100} planes or {111} planes.
申请人：Shin-Etsu Chemical Co., Ltd.
地址：6-1, Otemachi 2-chome, Chiyoda-ku Tokyo 100-0004 JP
国籍：JP
代理机构：HOFFMANN EITLE
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