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专利名称：Method and structure to improve reliability
of copper interconnects
发明人：Bulent M. Basol,Homayoun Talieh申请号：US10858766申请日：20040601公开号：US07129165B2公开日：20061031
专利附图：
摘要：A method of forming a conductor structure on a surface of a wafer is provided.The surface of the wafer includes cavities separated by field regions. Initially, a barrierlayer is deposited on the surface that includes cavities separated by field regions. A thin
seed layer with a substantially uniform thickness is deposited on the barrier layer. Thebarrier layer and the seed layer portions in the cavities occupy less than 30% of thevolume of each cavity. The remaining volume of each cavity is filled with a conductivematerial which is formed on the seed layer. The conductive layer has a substantially smallthickness. After forming the conductive layer, the wafer is annealed to increase grain sizein the conductive layer and the seed layer.
申请人：Bulent M. Basol,Homayoun Talieh
地址：Manhattan Beach CA US,San Jose CA US
国籍：US,US
代理机构：Knobbe Martens Olson & Bear LLP
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