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专利名称：Dynamic RAM having a full size dummy cell发明人：Katsuyuki Sato,Kazumasa Yanagisawa,Kunio
Ono
申请号：US06/729859申请日：19850502公开号：US04961166A公开日：19901002
摘要：A dynamic RAM, in which the difference between a data signal level from one ofa pair of complementary data lines coupled to a memory cell and a reference potentiallevel of the other of the complementary data lines is differentially amplified by a senseamplifier. The data line taking the reference potential level is coupled to the other dataline through a switch element so that its data line capacitance is increased. As a result, thereference potential level is held at a relatively stable level irrespective of a leakagecurrent such as that caused by &agr; particles. This construction makes it possible to usea full-size dummy cell because the capacitance of the data lines which takes thereference potential level is increased. The reference potential level achieved by the useof the full-size dummy cell is made relatively accurate because of the relative accuracybetween the capacitances of the memory cells and the capacitance of the full-sizedummy cell.
申请人：HITACHI, LTD.
代理机构：Antonelli, Terry, Stout & Kraus
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