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专利名称：Crystallizing method of ferroelectric film发明人：Kazuya Ishihara,Shigeo Onishi,Masaya Komai申请号：US08/321470申请日：19941011公开号：US05443030A公开日：19950822
摘要：A lower capacitor electrode is formed on the basic plate 1, and thereafter aferroelectric film, for example, a PZT film having the Pb is formed. ITO, RuO2, SnO2 whichare Pt or oxide conductive material are formed as a cap layer into 200 Å or more in filmthickness by a sputtering method or silicone oxide film or the like are formed with 200Aor more in film thickness by a thermal CVD method. Thereafter, a thermal operatingoperation is effected. By the prevention of the Pb from being evaporated at the thermalprocessing time, the elaborate ferroelectric film of stoichiometrical perovskiteconstruction can be formed.
申请人：SHARP KABUSHIKI KAISHA
代理机构：Nixon & Vanderhye
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