专利内容由知识产权出版社提供
专利名称：Method of fabricating complementary high-voltage field-effect transistors
发明人：Donald Ray Disney申请号：US107925申请日：20030826公开号：US06818490B2公开日：20041116
专利附图：
摘要：A method of fabricating complementary high-voltage field-effect transistors ina substrate of a first conductivity type includes forming first and second well regions of asecond conductivity type in the substrate. A first drain region of the second conductivity
type is formed in the first well region, and a first source region is formed in the substrateadjacent the first well region. Second and third drain regions of the first conductivity typeare formed in the second well region separated from one another. A second sourceregion of the first conductivity type Is formed In the second well region separated fromthe second drain region. First and second buried layers are formed within the first andsecond well regions, respectively, with the second buried layer connected to the secondand third drain regions.
申请人：POWER INTEGRATIONS, INC.
代理机构：Burgess & Bereznak, LLP
更多信息请下载全文后查看
