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专利名称：Structure of metal gate and fabrication
method thereof
发明人：Cheng-Yu Ma,Wen-Han Hung申请号：US13161512申请日：20110616公开号：US08673758B2公开日：20140318
专利附图：
摘要：A method for fabricating a metal gate includes the following steps. First, asubstrate having an interfacial dielectric layer above the substrate is provided. Then, agate trench having a barrier layer is formed in the interfacial dielectric layer. A source
layer is disposed above the barrier layer. Next, a process is performed to have at leastone element in the source layer move into the barrier layer. Finally, the source layer isremoved and a metal layer fills up the gate trench.
申请人：Cheng-Yu Ma,Wen-Han Hung
地址：Tainan TW,Kaohsiung TW
国籍：TW,TW
代理人：Winston Hsu,Scott Margo
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