IR2155

recommend IR’s new products IR2153 and IR21531)

IR2155 (NOTE: For new designs, we

Product Summary

VOFFSETDuty CycleIO+/-VOUTDeadtime (typ.)600V max.50%210 mA / 420 mA10 - 20V1.2 µsSELF-OSCILLATING HALF-BRIDGE DRIVER

Features

•Floating channel designed for bootstrap operationFully operational to +600VTolerant to negative transient voltagedV/dt immuneUndervoltage lockoutProgrammable oscillator frequency••f=11.4×(RT+150Ω)×CT•Matched propagation delay for both channels•Micropower supply startup current of 125 µA typ.•Low side output in phase with RTPackageDescriptionThe IR2155 is a high voltage, high speed, self-os-cillating power MOSFET and IGBT driver with bothhigh and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction. The frontend features a programmable oscillator which is simi-lar to the 555 timer. The output drivers feature a highpulse current buffer stage and an internal deadtimedesigned for minimum driver cross-conduction. Propa-gation delays for the two channels are matched to sim-plify use in 50% duty cycle applications. The floatingchannel can be used to drive an N-channel power8 Lead PDIPMOSFET or IGBT in the high side configuration thatoperates off a high voltage rail up to 600 volts.up to 600VTypical ConnectionVCCRTCTCOMVBHOVSLOTOLOAD(Refer to Lead Assignment diagram for correct pin configuration)www.irf.com1

IR2155

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measuredunder board mounted and still air conditions.

SymbolVBVSVHOVLOVRTVCTICCIRTdVs/dtPDRθJATJTSTLParameterDefinitionHigh Side Floating Supply VoltageHigh Side Floating Supply Offset VoltageHigh Side Floating Output VoltageLow Side Output VoltageRT VoltageCT VoltageSupply Current (Note 1)RT Output CurrentAllowable Offset Supply Voltage TransientPackage Power Dissipation @ TA ≤ +25°CThermal Resistance, Junction to AmbientJunction TemperatureStorage TemperatureLead Temperature (Soldering, 10 seconds)(8 Lead DIP)(8 Lead SOIC)(8 Lead DIP)(8 Lead SOIC)ValueMin.-0.3VB - 25VS - 0.3-0.3-0.3-0.3—-5——————-55—Max.625VB + 0.3VB + 0.3VCC + 0.3VCC + 0.3VCC + 0.3255501.00.625125200150150300UnitsVmAV/nsW°C/W°CRecommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within therecommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

SymbolVBVSVHOVLOICCTANote 1:

DefinitionHigh Side Floating Supply Absolute VoltageHigh Side Floating Supply Offset VoltageHigh Side Floating Output VoltageLow Side Output VoltageSupply Current (Note 1)Ambient TemperatureMin.VS + 10—VS0—-40Max.VS + 20600VBVCC5125UnitsVmA°CBecause of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clampstructure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the ICsupply voltage is normally derived by forcing current into the supply lead (typically by means of a high valueresistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor fromVCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-fore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP.

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IR2155

Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 12V, CL = 1000 pF and TA = 25°C unless otherwise specified.

SymboltrtrDTDParameterDefinitionTurn-On Rise TimeTurn-Off Fall TimeDeadtimeRT Duty CycleValueMin.Typ.Max.UnitsTest Conditions——0.504880401.2050120702.2552nsµs%Static Electrical CharacteristicsVBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IINparameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to therespective output leads: HO or LO.SymbolfOSCVCLAMPVCT+VCT-VCTUVVRT+VRT-VRTUVVOHVOLILKIQBSIQBSUVIQCCIQCCUVICTVBSUV+VBSUV-VBSUVHVCCUV+VCCUV-VCCUVHIO+IO-DefinitionOscillator FrequencyVCC Zener Shunt Clamp Voltage2/3 VCC Threshold1/3 VCC ThresholdCT Undervoltage LockoutRT High Level Output Voltage, VCC - RTRT Low Level Output VoltageRT Undervoltage Lockout, VCC - RTHigh Level Output Voltage, VBIAS - VOLow Level Output Voltage, VOOffset Supply Leakage CurrentQuiescent VBS Supply CurrentMicropower VBS Supply Startup CurrentQuiescent VCC Supply CurrentMicropower VCC Supply Startup CurrentCT Input CurrentVBS Supply Undervoltage Positive GoingThresholdVBS Supply Undervoltage Negative GoingThresholdVBS Supply Undervoltage Lockout HysteresisVCC Supply Undervoltage Positive GoingThresholdVCC Supply Undervoltage Negative GoingThresholdVCC Supply Undervoltage Lockout HysteresisOutput High Short Circuit Pulsed CurrentOutput Low Short Circuit Pulsed CurrentMin.19.49414.47.83.8——————————————7.77.31007.77.4200210420Typ.Max.UnitsTest Conditions20.010015.68.04.0200200202000———7055500700.0018.48.14008.48.140025050020.610616.88.24.250100300503001001001005015012510001501.09.28.9—9.28.9———kHzV2.5V < VCC < VCCUVIRT = -100 µAIRT = -1 mAIRT = 100 µAIRT = 1 mA2.5V < VCC < VCCUVIO = 0AIO = 0AVB = VS = 600VRT = 35.7 kΩRT = 7.04 kΩICC = 5 mAmVµAVmVVmVmAVO = 0VVO = 15Vwww.irf.com3

IR2155

Functional Block Diagram

VBRRT-+R-+RUVDETECTRSQQVCC15.6VDEADTIMELOPULSEGENHVLEVELSHIFTUVDETECTPULSEFILTERRRSQHODEADTIMEVSCTDELAYCOMSymbol

RTCT

Description

Oscillator timing resistor input,in phase with LO for normal IC operation

Oscillator timing capacitor input, the oscillator frequency according to the following equation:

f=

VBHOVSVCCLOCOM

1

1.4×(RT+150Ω)×CT

where 150Ω is the effective impedance of the RT output stageHigh side floating supplyHigh side gate drive outputHigh side floating supply returnLow side and logic fixed supplyLow side gate drive outputLow side return

Lead Assignments8 Lead DIPIR21554

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IR215501-3003 01www.irf.com5

IR2155

VCCUV+VCCVCLAMPRT (HO)RTCT50%50%RT (LO)trtf90%90%HOLOLOHO10%10%RT50%50%90%HOLO90%10%DT10%WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105http://www.irf.com/ Data and specifications subject to change without notice. 3/29/20016www.irf.com